Abstract:The microstructures of YBCO/N/YBCO ramp-edge junctions have been studied by transmission electron microscopy and related to supercurrent transport properties which depend on the barrier layer N, the interfacial structures and defect structures in the multilayer epitaxial devices. Three different types of junction materials were investigated: Metallic oxide barriers, CaRuO3 and SrRuO3; barriers isostructural to YBCO, Co-doped YBCO and Co-doped PrBa2Cu3O7; and ‘interface engineered’ barriers, formed by plasma treatment of the YBCO ramp-edge. Metallic oxide barriers are characterized by high steps and strong variations in local barrier width. The observed topologies are consistent with an island growth mode for both CaRuO3 and SrRuO3. The metallic oxide barriers are associated with interfacial strain fields that are believed to be the cause for interfacial oxygen depletion in YBCO and the observed excess normal-state resistance. A number of structural defects and deviations from perfect epitaxy have been observed. Most disruptive to the integrity of the multilayer structures and transport properties is the nucleation of a-axis YBCO grains at steep barrier steps and within the YBCO layers. The barrier layers in isostructural junctions are well structured with a high degree of interfacial coherence and for the most part, Cu–O planes are continuous across the interfaces. In contrast to heterostructured metallic oxide barriers, isostructural junctions contain few extraneous defects, such as a-axis grains at the barrier layer, moreover, the second YBCO layer is of good quality due to the perfect epitaxy between the materials. Among the junctions investigated the interface engineered junctions have shown the best electromagnetic properties. Their structure is characterized by narrow (2–3nm) barriers that are continuous and crystalline. No significant interfacial strains and structural disorder were observed. This and a constant barrier thickness appear responsible for obtaining good uniformity of electric transport properties. The narrow pinhole-free barrier, coupled with excellent epitaxy and few defects, yields good reproducibility and a range of properties suitable for practical applications.

Direct Comparison of Andreev Bound States Formed at Different Interfaces Using YBa 2 Cu 3 O 7− y /I/Ag Ramp-edge Junctions

Observation of Quasiparticle Andreev Bound States Usingyba2cu3o

Observation of bound surface states in grain-boundary junctions of high-temperature superconductors

Observation of Andreev reflection in the c-axis transport of Bi_2Sr_2CaCu_2O_{8+x} single crystals near T_c and search for the preformed-pair state

Andreev reflection in point-contact tunneling spectroscopy on Bi2Sr1.94La0.06CuO6+δ single crystals

Unconventional Andreev Reflection on the Quasi-One-dimensional Superconductor Nb2PdxSe5

Andreev Bound States in a Few-Electron Quantum Dot Coupled to Superconductors

Point Contact Spectra on YBa$_2$Cu$_3$O$_{7-x}$/La$_{0.7}$Ca$_{0.3}$MnO$_3$ bilayers

Andreev Reflection and 0- Π Transition in Graphene-Based Antiferromagnetic Superconducting Junctions

Andreev reflection and spin polarization measurement of Co/YBCO junction

Andreev Reflection Without Fermi Surface Alignment in High-Tc Van Der Waals Heterostructures

Andreev Reflection in the Quantum Hall Regime at an Al/InAs Junction on a Cleaved Edge

Properties of YBa/sub 2/cu/sub 3/o/sub 7/ Thin Films Deposited on Substrates and Bicrystals with Vicinal Offcut and Realization of High I/sub C/r/sub N/ Junctions

Tunneling processes between Yu-Shiba-Rusinov bound states

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Anomaly of Zero-Bias Conductance Peaks in Ferromagnet/D-Wave Superconductor Junctions

Spatially Dependent in-Gap States Induced by Andreev Tunneling through a Single Electronic State

High-Tc Cooper-pair Injection in a Semiconductor–superconductor Structure

Study of 0-$π$ phase transition in hybrid superconductor-InSb nanowire quantum dot devices

Andreev reflection of quantum Hall states through a quantum point contact

Electron Microscopy of High-Tc Josephson Junctions Formed in the Epitaxial Layer Ramp-Edge Geometry: YBCO/barrier/YBCO