Defect-Induced Overshoot of Quantum Hall Plateaus

QN Wang,HQ Xu,P Omling,C Yang,KG Malmqvist
DOI: https://doi.org/10.1088/0268-1242/15/6/307
IF: 2.048
2000-01-01
Semiconductor Science and Technology
Abstract:Studies on magnetoresistance in the quantum Hall regime show that defects induced by proton irradiation strongly change the transport properties of an AlGaAs/GaAs two-dimensional electron gas. In particular, it is shown that the overshoot of the quantized value of the Hall resistance at odd filling factors can be introduced by these defects. A model, that explains the observation and assumes that the defects which have spins are essential for mediating the electron scattering in the two-dimensional electron gas, is presented.
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