Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

The Investigation of Electron–phonon Coupling on Thermal Transport Across Metal–semiconductor Periodic Multilayer Films

Importance of Electron-Phonon Coupling in Thermal Transport in Metal/semiconductor Multilayer Films

Phonon dominated heat conduction normal to Mo/Si multilayers with period below 10 nm

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

The Investigation of Thermal Properties on Multilayer Sb2Te3/Au Thermoelectric Material System with Ultra-Thin Au Interlayers

Thermal conductivity measurement of amorphous Si/SiGe multilayer films by 3 omega method

Effects of interfaces on the thermal conductivity in Si/Si0.75Ge0.25 multilayer with varying Au layers

A Comparative Experimental Study on the Cross-Plane Thermal Conductivities of Nano-Constructed Sb2Te3/(Cu, Ag, Au, Pt) Thermoelectric Multilayer Thin Films

Prediction and Measurement of Thermal Transport Across Interfaces Between Semiconductor and Adjacent Layers

Ultra-low thermal conductivity on Si/Au multilayer films with metal layer thickness below 8 nm

Interfacial Phonon Transport Through Si/Ge Multilayer Film Using Monte Carlo Scheme with Spectral Transmissivity

A comparative study of interfacial thermal conductance between metal and semiconductor

Measurements of electron-phonon coupling factor and interfacial thermal resistance of metallic nano-films using a transient thermoreflectance technique

Low Thermal Conductivity of Amorphous Si/Si 0.75 Ge 0.25 Multilayer Films with Au-interlayers

Role of the electron-phonon coupling in tuning the thermal boundary conductance at metal-dielectric interfaces by inserting ultrathin metal interlayers

Quasi-ballistic thermal transport across MoS$_2$ thin films

Inelastic Phonon Transport Across Atomically Sharp Metal/semiconductor Interfaces

Differentiating contribution of electron–phonon coupling to the thermal boundary conductance of metal–metal–dielectric systems

In-plane Interfacial Phonon Transport Through Multi-Layer Thin Films by Theoretical Analyses and Monte Carlo Simulations

Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Films Using Improved Structure

Electron-Phonon Transport in Graphene Devices