Photosensitivity in Doped and Sensitized Cis‐polyphenylacetylene

MJ YANG,JA ZHAO,WD ZHANG,ZQ SHEN
DOI: https://doi.org/10.1002/macp.1991.021920603
1991-01-01
Abstract:The photosensitivity in cis-polyphenylacetylene (cis-PPA, polymerized with rare-earth catalysts) can be significantly enhanced by doping the PPA with I2 or FeCl3 and sensitizing with 4-isothiocyanatofluorescein (F-II) or 2,4,7-trinitro-9-fluorenone (TNF), which are powerful sensitizers. The electrophotographic photoreceptor (P/R) device with cis-PPA + F-II (on Al substrate) appeared preferable in photosensitivity enhancement and showed good photosensitivity: dark decay 1,8 V/s; maximum rate of discharge 321 V/s; residual surface potential 22 V; discharge 89,1%; photosensitivity 2,96 s-1. This is a new ''family'' of photosensitive materials which can be used in a duplicator.
What problem does this paper attempt to address?