A W-Band Injection-Locked Frequency Doubler Based on Top-Injected Coupled Resonator

Haikun Jia,Lixue Kuang,Zhihua Wang,Baoyong Chi

DOI: https://doi.org/10.1109/tmtt.2015.2498600

IF: 4.3

2015-01-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:A W-band injection-locked frequency doubler in 65-nm CMOS is proposed. By using the coupled resonator, a 69.2-94.6-GHz locking range has been achieved with a 3.4- similar to 4.1-dBm injected power. The second-order harmonic current is injected from the top of the resonator, which avoids the source degeneration issue. The measured phase-noise deterioration from that of the injected signal at 100-kHz offset is only 6.2 dB, which is close to the theoretical calculation. The doubler occupies a die area of 0.16 mm(2), including the buffers, and draws 9.7- similar to 11.4-mA current from a 1.0-V power supply excluding the buffers.