Semiconductor Interfacial Carrier Dynamics Via Photoinduced Electric Fields

Ye Yang,Jing Gu,James L. Young,Elisa M. Miller,John A. Turner,Nathan R. Neale,Matthew C. Beard
DOI: https://doi.org/10.1126/science.aad3459
IF: 56.9
2015-01-01
Science
Abstract:Solar photoconversion in semiconductors is driven by charge separation at the interface of the semiconductor and contacting layers. Here we demonstrate that time-resolved photoinduced reflectance from a semiconductor captures interfacial carrier dynamics. We applied this transient photoreflectance method to study charge transfer at p-type gallium-indium phosphide (p-GaInP2) interfaces critically important to solar-driven water splitting. We monitored the formation and decay of transient electric fields that form upon photoexcitation within bare p-GaInP2, p-GaInP2/platinum (Pt), and p-GaInP2/amorphous titania (TiO2) interfaces. The data show that a field at both the p-GaInP2/Pt and p-GaInP2/TiO2 interfaces drives charge separation. Additionally, the charge recombination rate at the p-GaInP2/TiO2 interface is greatly reduced owing to its p-n nature, compared with the Schottky nature of the p-GaInP2/Pt interface.
What problem does this paper attempt to address?