Bismuth Oxysulfide Modified ZnO Nanorod Arrays as an Efficient Electron Transport Layer for Inverted Polymer Solar Cells
Zuping Wu,Huangzhong Yu,Shengwei Shi,Yanping Li,zuping wu,Sheng wei Shi
DOI: https://doi.org/10.1039/C9TA02447F
IF: 11.9
2019-10-07
Journal of Materials Chemistry A
Abstract:Vertically aligned zinc oxide nanorod arrays (ZnO NRAs) are expected to provide a direct and stable electron transport pathway in polymer solar cells (PSCs) so as to enhance charge carrier collection and transport. However, the electrical coupling of ZnO NRAs/active layer and the surface defects limit the improvement of device performance. The modification of surface of ZnO NRAs is an effective way to solve this problem. In this paper, we report enhanced performance of inverted polymer solar cells (IPSCs) composed of poly(3-hexylthiophene) (P3HT): [6,6]-pheny C61-butyric acid methy ester (PCBM) blends by using bismuth oxysulfide (Bi2O2S) modified ZnO NRAs as an efficient electron transport layer (ETL). It is found that the modification of the ZnO NRAs surface with Bi2O2S can effectively passivate the surface traps, reduce the series resistance, improve the electrical coupling of ZnO NRAs/active layer, and enhances the crystallinity of the active layer. Consequently, the open-circuit voltage (Voc), the short-circuit current (Jsc) and the fill factor (FF) of the PSCs are considerably improved. The resulting power conversion efficiency (PCE) is improved to 3.61% as compared to 2.47% of the reference device without Bi2O2S modification. Moreover, this approach can also successfully improve the performance of another IPSCs composed of Poly[(2,6-(4,8-bis(5-(2-ethylhexyl) thiophen-2-yl)-benzo [1,2-b:4,5-b']dithiophene))-alt-(5,5-(1',3' -di-2-thienyl-5',7'-bis(2-ethylhexyl)benzo[1',2'-c:4',5'-c']dithiophene-4,8-dione)] (PBDB-T) : 3,9- bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3'-d']-s-indaceno[1,2-b:5,6-b']dithiophene (ITIC) blends. The PCE of the device based on the Bi2O2S-modified ZnO layer is improved to 9.89% from 7.76% of the reference device without Bi2O2S modification. This work not only provides an effective mean of surface modification of ZnO NRAs, but also demonstrates the Bi2O2S material has potential for applications for photovoltaic devices.
materials science, multidisciplinary,chemistry, physical,energy & fuels