Abstract:AlGaAs/GaAs quantum well heterostructures based on core-multishell nanowires exhibit excellent optical properties which are acutely sensitive to structure and morphology. We characterize these heterostructures and observe them to have 3-fold symmetry about the nanowire axis. Using aberration-corrected annular dark field scanning transmission electron microscopy (ADF-STEM), we measure directly the polarity of the crystal structure and correlate this 49) with the shape and facet orientation of the GaAs core, quantum wells and cap, and the width of radial Al-rich bands. We discuss how the underlying polarity of the crystal structure drives the growth of these heterostructures with a 3-fold symmetry resulting in a nonuniform GaAs quantum well tube and AlGaAs shell. These observations suggest that the AlGaAs growth rate is faster along the < 112 > B compared to the < 112 > A directions and/or that there is a polarity driven surface reconstruction generating AlGaAs growth fronts inclined to the {110} planes. In contrast, the observations suggest that the opposite is true for the GaAs growth, with the preferred surface reconstruction plane being parallel to {110} and an apparent faster growth rate along the < 112 > A. This two-dimensional layer growth of the nanowire multishells strongly depends on the surface energies and surface reconstruction of the facets which are related to the crystal polarity and lead to the 3-fold symmetry observed here.

Polarity-Driven Quasi-3-Fold Composition Symmetry of Self-Catalyzed III-V-V Ternary Core-Shell Nanowires.

Polarity-driven Nonuniform Composition in InGaAs Nanowires.

Polarity-driven 3-Fold Symmetry of GaAs/AlGaAs Core Multishell Nanowires.

3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition.

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Growth of High-Quality Self-Catalyzed Core-Shell Gaasp Nanowires on Si Substrates

Self-induced Antimony Compositional Variation GaAs/Ga(As)Sb Core-Shell Nanowires by Molecular Beam Epitaxy

Self-Catalyzed Gaasp Nanowires Grown On Silicon Substrates By Solid-Source Molecular Beam Epitaxy

Self-catalyzed ternary core-shell GaAsP nanowire arrays grown on patterned Si substrates by molecular beam epitaxy.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Precise Characterization of Self-Catalyzed III–V Nanowire Heterostructures Via Optical Second Harmonic Generation

Polarity Driven Formation of InAs/GaAs Hierarchical Nanowire Heterostructures

Synthesis and characterization of Zn3P2/ZnS core/shell nanowires

Bending and reverse bending during the fabrication of novel GaAs/(In,Ga)As/GaAs core-shell nanowires monitored by in situ X-ray diffraction

Study of the Polarization Effect in InAs Quantum Dots/GaAs Nanowires

Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology

Compositional Varied Core-Shell InGaP Nanowires Grown by Metal-Organic Chemical Vapor Deposition.

Polarity Assignment in Znte, Gaas, Zno, and Gan-Aln Nanowires from Direct Dumbbell Analysis

Simulation of self-assembled compositional core-shell structures in In x Ga 1 − x N nanowires

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon