Abstract:In-sensor computing has attracted considerable interest as a solution for overcoming the energy efficiency and response time limitations of the traditional von Neumann architecture. Recently, emerging memristors based on transition-metal oxides (TMOs) have attracted attention as promising candidates for in-memory computing owing to their tunable conductance, high speed, and low operational energy. However, the poor photoresponse of TMOs presents challenges for integrating sensing and processing units into a single device. This integration is crucial for eliminating the need for a sensor/processor interface and achieving energy-efficient in-sensor computing systems. In this study, a Si/CuO heterojunction-based photomemristor is proposed that combines the reversible resistive switching behavior of CuO with the appropriate optical absorption bandgap of the Si substrate. The proposed photomemristor demonstrates a simultaneous reconfigurable, non-volatile, and self-powered photoresponse, producing a microampere-level photocurrent at zero bias. The controlled migration of oxygen vacancies in CuO result in distinct energy-band bending at the interface, enabling multiple levels of photoresponsivity. Additionally, the device exhibits high stability and ultrafast response speed to the built-in electric field. Furthermore, the prototype photomemristor can be trained to emulate the attention-driven nature of the human visual system, indicating the tremendous potential of TMO-based photomemristors as hardware foundations for in-sensor computing.

An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions.

Optically and Electrically Controllable Light-Emitting Nonvolatile Resistive Switching Memory

Optoelectronic Modulation of Interfacial Defects in Lead‐Free Perovskite Films for Resistive Switching

Si/CuO Heterojunction-Based Photomemristor for Reconfigurable, Non-Volatile, and Self-Powered In-Sensor Computing.

Optically Mediated Nonvolatile Resistive Memory Device Based on Metal-Organic Frameworks

Giant Laser-Induced Resistive Switching Effect in Ag/TiOx/p - Si Structures

Photovoltage Junction Memtransistor for Optoelectronic In-memory Computing

Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device

Phototunable Biomemory Based on Light-Mediated Charge Trap

Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3−xClx/FTO structure

Giant laser-induced resistive switching effect in - structures

Bistable Electrical Switching and Memory Effects in a Thin Film of Copolymer Containing Electron Donor-Acceptor Moieties and Europium Complexes.

Oxide Heterostructure Resistive Memory.

Non-volatile optoelectronic memory based on a photosensitive dielectric

Effect of Visible-Light Illumination on Resistive Switching Characteristics in Ag/Ce2W3O12/FTO Devices

Reliable Analog Resistive Switching Behaviors Achieved Using Memristive Devices in AlO X /hfo X Bilayer Structure for Neuromorphic Systems

Ferroelectric Diode-Like Resistive Switching Behavior in Bi0.95Er0.05FeO3/CuFe2O4 Heterostructures for Non-Volatile Memories

Multilevel Conductance Switching of Memory Device Through Photoelectric Effect.

Low-Voltage, Optoelectronic CH3NH3PbI3-xClx Memory with Integrated Sensing and Logic Operations

Memristive Synapses with Photoelectric Plasticity Realized in ZnO 1-x /AlO y Heterojunction.

Dual-Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfO x Devices