Synergetic Effect of Zn Substitution on the Electron and Phonon Transport in Mg2Si0.5Sn0.5-based Thermoelectric Materials.

Hongli Gao,Tiejun Zhu,Xinbing Zhao,Yuan Deng

DOI: https://doi.org/10.1039/c4dt01734j

IF: 4

2014-01-01

Dalton Transactions

Abstract:Isoelectronic Zn substitution in Mg2Si0.5Sn0.5-based thermoelectric materials improved mobility without affecting carrier concentration, leading to an enhancement of ZT.

What problem does this paper attempt to address?

Roles of Interstitial Mg in Improving Thermoelectric Properties of Sb-doped Mg2Si0.4Sn0.6 Solid Solutions

Zhengliang Du,Tiejun Zhu,Yi Chen,Jian He,Hongli Gao,Guangyu Jiang,Terry M. Tritt,Xinbing Zhao

DOI: https://doi.org/10.1039/c2jm16694a

2012-01-01

Journal of Materials Chemistry

Abstract:While adding extra Mg is intended to compensate for the Mg loss during the synthesis, it often leads to Mg interstitials in Mg-2(Si,Sn) materials and profoundly affects their thermoelectric properties. Herein we studied the electrical conductivity, Seebeck coefficient, and thermal conductivity of Mg2(1+ x)Si0.38Sn0.6Sb0.02 (0.05 <= x <= 0.12) as a function of Mg excess between 300 K and 730 K. The presence of interstitial Mg was corroborated by X-ray powder diffraction, X-ray photoelectron spectroscopy, Hall coefficient measurement, and compositional analysis. The electrical properties have been analyzed in the framework of a single parabolic band model to gain more insight on the roles of Mg interstitials. We found that increasing Mg excess content increased the carrier concentration, electronic effective mass, and electrical conductivity, while it decreased the Seebeck coefficient and led to a non-monotonic change in the lattice thermal conductivity. As a result, a maximum ZT similar to 0.85 was attained at 700 K for Mg excess x = 0.1, a similar to 60% enhancement compared to that of the sample x = 0.05. The Mg interstitials thus provide an extra tuning parameter in optimizing the thermoelectric properties of Mg-2(Si,Sn)-based materials.
Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation

Binhao Wang,Haidong Zhao,Jianghua Li,Bin Zhang,Dan Wang,Chen Chen,Aihua Song,Wentao Hu,Dongli Yu,Bo Xu,Yongjun Tian

DOI: https://doi.org/10.1016/j.jmat.2023.06.001

IF: 8.589

2023-06-01

Journal of Materiomics

Abstract:With the advantages of eco-friendliness, low cost, and low density, Mg2(Si,Sn) solid solutions are promising candidates for thermoelectric applications. In this work, Sb-doped Mg2Si0.4Sn0.6 bulks were prepared with a combined method of solid-state reaction and high pressure synthesis, followed by spark plasma sintering. Our investigations show that Sb doping optimizes the carrier concentration, while Si/Sn alloying effectively suppresses the lattice thermal conductivity and induces a convergence of the two lowest-lying conduction bands. Additionally, numerous coherent Sn-rich nanoprecipitates are formed within micron-sized grains. All these factors contribute synergistically to improving the thermoelectric properties of Mg2Si0.4Sn0.6. The optimal Mg2(Si0.4Sn0.6)0.985Sb0.015 exhibits a power factor higher than 4000 μW·m−1·K−2 and a lattice thermal conductivity less than 0.8 W·m−1·K−1 at temperatures higher than 600 K, leading to the highest ZT of 1.61 at 823 K. Current work demonstrates an effective approach to enhancing the thermoelectric performance of n-type Mg2X solid solutions through doping, alloying, and microstructure modification.

materials science, multidisciplinary,chemistry, physical,physics, applied
Synergistic modulation of the thermoelectric performance of melt-spun p-type Mg 2 Sn via Na 2 S and Si alloying

Yuling Huang,Sikang Zheng,Huijun Liao,Saisai Qiao,Guang Han,Guoyu Wang,Zhengyong Huang,Jian Li,Xu Lu,Xiaoyuan Zhou

DOI: https://doi.org/10.1039/d1ta10582e

IF: 11.9

2022-01-01

Journal of Materials Chemistry A

Abstract:Na 2 S and Si alloying synergistically optimizes the electrical and thermal transport properties of melt-spun p-type Mg 2 Sn, contributing to a peak thermoelectric zT of 0.52 at 723 K.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Multiscale Defects as Strong Phonon Scatters to Enhance Thermoelectric Performance in Mg2Sn1-xSbx Solid Solutions

Jiazhan Xin,Yang Zhang,Haijun Wu,Tiejun Zhu,Tiezheng Fu,Jiajun Shen,Stephen J. Pennycook,Xinbing Zhao

DOI: https://doi.org/10.1002/smtd.201900412

IF: 12.4

2019-01-01

Small Methods

Abstract:Mg2Sn based solid solutions have attracted much research interest due to their high thermoelectric (TE) performance in the mid-temperature region and abundant constituent elements. Further enhancement of the figure of merit zT lies in the effective reduction of the relatively high lattice thermal conductivity. It has been demonstrated that alloying high content of aliovalent Sb (>10%) in Mg2Si analogue can induce Mg vacancies and dense dislocations to greatly suppress the lattice thermal conductivity. In this work, the strategy is extended to the Sb alloyed Mg2Sn to enhance zT. Detailed microstructure investigations reveal the existence of high density of interstitial clusters. By introducing these nanostructures as the additional phonon scattering sources, the theoretical calculation well match the low experimental lattice thermal conductivity. Superior to the Sb alloyed Mg2Si, relatively high power factor is maintained in the Sb alloyed Mg2Sn and the maximum zT of 0.9 at 750 K is obtained. With simpler chemical composition though, the Mg2Sn1-xSbx (x > 0.1) has comparable TE performance with the Sb alloyed Mg2Si0.4Sn0.6 solid solutions, exhibiting promising potential for practical applications. The present work offers a comprehensive understanding of the effect of aliovalent alloying and concomitant complex microstructure in reducing thermal conductivity and enhancing zT.
Effect of Sb Doping on the Thermoelectric Properties of Mg 2 Si 0.7 Sn 0.3 Solid Solutions

H. L. Gao,X. X. Liu,T. J. Zhu,S. H. Yang,X. B. Zhao

DOI: https://doi.org/10.1007/s11664-011-1584-2

IF: 2.1

2011-01-01

Journal of Electronic Materials

Abstract:This study focuses on Sb-doped Mg 2 (Si,Sn) thermoelectric material. Samples were successfully fabricated using a hybrid synthesis method consisting of three different processes: induction melting, solid-state reaction, and a hot-press sintering technique. We found that the carrier concentration increased with Sb content, while the Seebeck coefficient exhibited a decreasing trend. Sb doping was shown to improve the power factor and thermoelectric figure of merit compared with the undoped material, yielding a peak figure of merit ( ZT ) of ~0.55 at 620 K, while leaving the band gap of Mg 2 Si 0.7 Sn 0.3 almost unchanged.
Thermoelectric performance enhancement of Mg2Sn based solid solutions by band convergence and phonon scattering via Pb and Si/Ge substitution for Sn

Jun Mao,Yumei Wang,Binghui Ge,Qing Jie,Zihang Liu,Udara Saparamadu,Weishu Liu,Zhifeng Ren

DOI: https://doi.org/10.1039/c6cp03944h

2016-07-27

Abstract:In this study, the thermoelectric properties of Mg2Sn0.98-xPbxSb0.02 were first studied, and then Mg2Sn0.93-xSixPb0.05Sb0.02 and Mg2Sn0.93-xGexPb0.05Sb0.02 were accordingly investigated. The results showed that the formation of Mg2Sn0.98-xPbxSb0.02 solid solutions effectively reduced the lattice thermal conductivity of Mg2Sn. The room temperature lattice thermal conductivity of Mg2Sn0.98Sb0.02 is ∼5.2 W m(-1) K(-1) but only ∼2.5 W m(-1) K(-1) for Mg2Sn0.73Pb0.25Sb0.02, a reduction of ∼52%. Further alloying Mg2Sn0.98-xPbxSb0.02 with Mg2Si or Mg2Ge to form Mg2Sn0.93-xSixPb0.05Sb0.02 or Mg2Sn0.93-xGexPb0.05Sb0.02 reduced the lattice thermal conductivity significantly due to enhanced phonon scattering by point defects as well as nanoparticles. Moreover, bipolar thermal conductivities were suppressed due to the larger bandgap of Mg2Si and Mg2Ge than Mg2Sn. Furthermore, similar to the pseudo-binary Mg2Sn-Mg2Si and Mg2Sn-Mg2Ge systems, band convergence was also observed in pseudo-ternary Mg2Sn0.93-xSixPb0.05Sb0.02 and Mg2Sn0.93-xGexPb0.05Sb0.02 materials. The convergence of conduction bands led to higher PFs at lower temperatures for Mg2Sn0.93-xSixPb0.05Sb0.02 and Mg2Sn0.93-xGexPb0.05Sb0.02 materials. As a result, higher peak ZTs of ∼1.3 for Mg2Sn0.63Si0.3Pb0.05Sb0.02 and ∼1.2 for Mg2Sn0.68Ge0.25Pb0.05Sb0.02 were achieved.
High Figures Of Merit And Natural Nanostructures In Mg2si0.4sn0.6 Based Thermoelectric Materials

Q. Zhang,Jian He,Tiejun Zhu,ShengNan Zhang,Xinbing Zhao,Terry M. Tritt

DOI: https://doi.org/10.1063/1.2981516

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Mg-2(Si, Sn) compounds have shown great promise for thermoelectric applications due to good thermoelectric properties, nontoxicity, and abundantly available constituent elements. Herein we report on the thermoelectric properties and microstructure of high performance Mg2Si0.4-xSn0.6Sbx (0 <= x <= 0.015) alloys. The state-of-the-art ZT value of similar to 1.1 has been attained in the samples with x=0.0075 due to the relatively low thermal conductivity. In light of the simple cubic structure and mostly light constituent elements, the reduction in lattice thermal conductivity has been discussed in connection with a fairly large amount of in situ formed nanostructures in these samples. (C) 2008 American Institute of Physics.
Low electron scattering potentials in high performance Mg 2Si0.45Sn0.55 based thermoelectric solid solutions with band convergence

Xiaohua Liu,Tiejun Zhu,Heng Wang,Lipeng Hu,Hanhui Xie,Guangyu Jiang,Gary Jeffrey Snyder,Xinbing Zhao

DOI: https://doi.org/10.1002/aenm.201300174

IF: 27.8

2013-01-01

Advanced Energy Materials

Abstract:Understanding the electron and phonon transport characteristics is crucial for designing and developing high performance thermoelectric materials. Weak scattering effects on charge carriers, characterized by deformation potential and alloy scattering potential, are favorable for thermoelectric solid solutions to enable high carrier mobility and thereby promising thermoelectric performance. Mg-2(Si,Sn) solid solutions have attracted much attention due to their low cost and environmental compatibility. Usually, their high thermoelectric performance with ZT approximate to 1 is ascribed to the band convergence and reduced lattice thermal conductivity caused by alloying. In this work, both a low deformation potential = 13 eV and a low alloy scattering potential U = 0.7 eV are found for the thermoelectric alloys by characterizing and modeling of thermoelectric transport properties. The band convergence is also verified by the increased density-of-states effective mass. It is proposed that, in addition to band convergence and reduced lattice thermal conductivity, the low deformation potential and alloy scattering potential are additional intrinsic features that contribute to the high thermoelectric performance of the solid solutions.
Effect of Sb Doping on the Thermoelectric Properties of Mg2Si0.7Sn0.3 Solid Solutions

H. L. Gao,X. X. Liu,T. J. Zhu,S. H. Yang,X. B. Zhao

DOI: https://doi.org/10.1007/s11664-011-1584-2

IF: 2.1

2011-01-01

Journal of Electronic Materials

Abstract:This study focuses on Sb-doped Mg-2(Si,Sn) thermoelectric material. Samples were successfully fabricated using a hybrid synthesis method consisting of three different processes: induction melting, solid-state reaction, and a hot-press sintering technique. We found that the carrier concentration increased with Sb content, while the Seebeck coefficient exhibited a decreasing trend. Sb doping was shown to improve the power factor and thermoelectric figure of merit compared with the undoped material, yielding a peak figure of merit (ZT) of similar to 0.55 at 620 K, while leaving the band gap of Mg2Si0.7Sn0.3 almost unchanged.
Mg Vacancy and Dislocation Strains As Strong Phonon Scatterers in Mg2Si1−xSbx Thermoelectric Materials

Jiazhan Xin,Haijun Wu,Xiaohua Liu,Tiejun Zhu,Guanting Yu,Xinbing Zhao

DOI: https://doi.org/10.1016/j.nanoen.2017.03.012

IF: 17.6

2017-01-01

Nano Energy

Abstract:Mg2Si based solid solutions have unique advantages in the direct thermal to electrical energy conversion due to environmentally friendly and abundant constituent elements, and high thermoelectric performance. Further enhancing figure of merit zT of this materials system lies in the reduction of the relatively high lattice thermal conductivity. Alloying by high content of aliovalent Sb (> 10%) in Mg2Si can greatly suppress the lattice thermal conductivity, lower than conventional Mg-2(Si, Sn) solid solutions, due to the enhanced phonon scattering from Mg vacancy and concomitant strains. In this work, detailed microstructure observation for Sb alloyed Mg2Si reveal the existence of dense dislocations, around which the strip-like defects are viewed with isotropic strain. By introducing dislocations and vacancies as the additional phonon scattering sources, the model calculation can well match the experimental lattice thermal conductivity. The present work offers a comprehensive understanding of the role of vacancies and concomitant strains in reducing thermal conductivity, and may open a new venue for zT enhancement.
High Performance Mg2(Si,Sn) Solid Solutions: a Point Defect Chemistry Approach to Enhancing Thermoelectric Properties

guangyu jiang,jian he,tiejun zhu,chenguang fu,xiaohua liu,lipeng hu,xinbing zhao

DOI: https://doi.org/10.1002/adfm.201400123

IF: 19

2014-01-01

Advanced Functional Materials

Abstract:A point defect chemistry approach to improving thermoelectric (TE) properties is introduced, and its effectiveness in the emerging mid-temperature TE material Mg2(Si,Sn) is demonstrated. The TE properties of Mg2(Si,Sn) are enhanced via the synergistical implementation of three types of point defects, that is, Sb dopants, Mg vacancies, and Mg interstitials in Mg2Si0.4Sn0.6-xSbx with high Sb content (x > 0.1), and it is found that i) Sb doping at low ratios tunes the carrier concentration while it facilitates the formation of Mg vacancies at high doping ratios (x > 0.1). Mg vacancies act as acceptors and phonon scatters; ii) the concentration of Mg vacancies is effectively controlled by the Sb doping ratio; iii) excess Mg facilitates the formation of Mg interstitials that also tunes the carrier concentration; vi) at the optimal Sb-doping ratio near x approximate to 0.10 the lattice thermal conductivity is significantly reduced, and a state-of-the-art figure of merit ZT > 1.1 is attained at 750 K in 2 at% Zn doped Mg2Si0.4Sn0.5Sb0.1 specimen. These results demonstrate the significance of point defects in thermoelectrics, and the promise of point defect chemistry as a new approach in optimizing TE properties.
Optimization of the thermoelectric performance of α-MgAgSb-based materials by Zn-doping

Ting Zhang,Baokun Dong,Xuan Wang

DOI: https://doi.org/10.1007/s10853-021-06171-y

IF: 4.5

2021-05-19

Journal of Materials Science

Abstract:Recently, α-MgAgSb-based materials have proved to be a kind of potential thermoelectric materials around room temperature. Here, a series of Zn-doped α-MgAgSb have been successfully synthesized by high-temperature milting and spark plasma sintering combined with annealing. Effect of Zn-doping on the microstructure and thermoelectric performance of α-MgAgSb has been investigated. Results show that Zn-doping can enhance the crystallization and carrier concentration, resulting in an increased electrical performance. Simultaneously, multiscales of nanodots, defects, grain boundaries and impurities have been introduced to reduce the lattice thermal performance. Finally, both the optimized electrical and thermal properties significantly promote the thermoelectric performance. A peak ZT of 1.29 has achieved for Mg0.985Zn0.015Ag0.97Sb0.99 at 550 K, about 18% higher than MgAg0.97Sb0.99, which indicates that Zn-doping into Mg-site is beneficial to optimize the performance of α-MgAgSb-based thermoelectric materials.

materials science, multidisciplinary
Variations of Thermoelectric Properties of Mg2.2si1-Ysny-0.013sb0.013 Materials with Different Si/Sn Ratios

Hong Li Gao,Tiejun Zhu,Xinbing Zhao,Yuan Deng

DOI: https://doi.org/10.1016/j.jssc.2014.08.026

IF: 3.3

2014-01-01

Journal of Solid State Chemistry

Abstract:Mg2Si–Mg2Sn solid solutions are a promising class of thermoelectric materials. Mg2.2Si1−ySny−0.013Sb0.013 compounds with different Si/Sn ratios were prepared by B2O3 “flux” method followed by hot-pressing. The effect of Si/Sn ratio on the thermoelectric properties of the Mg2Si–Mg2Sn solid solutions at a fixed Sb doping level were measured in the temperature range 300–760K. With the increase of Sn content (0.3≤y≤0.7), power factors are improved and lattice thermal conductivity decreased. Band convergence induced by Si/Sn ratio leads to enhanced effective mass and the materials parameter β which qualifies a kind of thermoelectric material is improved evidently. A maximum ZT of ~1.1 at ~760K was achieved for the Mg2.2Si0.3Sn0.7–0.013Sb0.013 sample arising from a high power factor of ~4×10-3Wm−1K−2 and a low lattice thermal conductivity of ~1.6Wm−1K−1 at ~760K.
Enhanced Thermoelectric Performance by Strong Phonon Scattering at the Heterogeneous Interfaces of the Mg 2 Sn/Mg 3 Sb 2 High-Content Nanocomposite

Yongbin Zhu,Zhijia Han,Bing Han,Feng Jiang,Xinzhi Wu,Cheng-Gong Han,Yonghong Deng,Weishu Liu

DOI: https://doi.org/10.1021/acsami.1c16299

2021-11-16

Abstract:Nano approaches are practical strategies to boost the thermoelectric figure of merit due to the strong phonon scattering from the grain boundaries and nanoinclusions. Here, we have reported a strong phonon scattering at the heterogeneous interfaces of Mg2Sn/Mg3Sb2 high-content nanocomposites (HCnCs). As a result, a significantly reduced lattice thermal conductivity of 1.09 W m-1 K-1 was observed in the equimolar Mg2Sn/Mg3Sb2 HCnC, 80% lower than pure Mg2Sn and 25% lower than pure Mg3Sb2. As a result, a high ZT ∼ 1.13 at 773 K was achieved in the Mg2Sn/Mg3Sb2 HCnC. Furthermore, various defects, including solid solutions, nanoinclusions, and misfit dislocations, were observed in both the Mg3Sb2 phase and the Mg2Sn phase through the microstructure characterization.

materials science, multidisciplinary,nanoscience & nanotechnology
Thermodynamic criterions of the thermoelectric performance enhancement in Mg2Sn through the self-compensation vacancy

Yongbin Zhu,Zhijia Han,Feng Jiang,Erting Dong,Bo-Ping Zhang,Wenqing Zhang,Weishu Liu

DOI: https://doi.org/10.1016/j.mtphys.2020.100327

IF: 11.021

2021-01-01

Materials Today Physics

Abstract:We show a significant increase in thermoelectric figure-of-merit ZTmax from 0.7 of the normally doped Mg2Sn0.99Sb0.01 to 1.2 of the self-compensatively doped Mg1.94Sn0.8Sb0.2, which corresponds to a 70% enhancement. We provide a thermodynamic equilibrium energy criterion that explains the formation of compensation defects, and non-equilibrium transport criterion that is relative to the self-compensation defects to boost the thermoelectric performance, i.e. the normalized change of material parameter ΔB/B pure. Based on the theoretical basis of alloying scattering related to the electrons and phonons, we discuss the analytical optimized fraction of the dopants or the self-compensation vacancy in two cases, respectively. Our work provides a new theoretical guideline for the design of novel thermoelectric materials through the defects engineering, especially the self-compensation defects.

materials science, multidisciplinary,physics, applied
Maximized atomic disordering approach boost the thermoelectric performance of Mg2Sn through the self-compensation effect and steric effect

Yongbin Zhu,Erting Dong,Zhijia Han,Feng Jiang,Jiehe Sui,Wenqing Zhang,Weishu Liu

DOI: https://doi.org/10.1016/j.actamat.2021.117172

IF: 9.4

2021-09-01

Acta Materialia

Abstract:Atomic disordering was an effective strategy to reduce lattice thermal conductivity. In this work, the atomic disordering of Mg2-δSn1-xBix was maximized by both the charge self-compensation and steric effects. Due to the strong phonon scattering arose from substitutional defects BiSn and self-compensational vacancies VMg, an exclusively low lattice thermal conductivity of 1.38 W m−1 K−1 was observed in the Mg2-δSn0.8Bi0.2 sample, corresponding to only 30% of Mg2Sn, while a 30% less than that of its counterpart Mg2-δSn0.8Sb0.2 (1.97 W m−1 K−1). The EPMA result presents that the Mg2-δSn0.8Bi0.2 has a higher concentration of VMg than that of Mg2-δSn0.8Sb0.2, suggesting an apparent steric effect for the formation of VMg. Furthermore, the Mg vacancy and its induced lattice shrinkage also result in band convergence. Consequently, a high ZT of 1.14 was obtained at 500°C in the Mg2-δSn0.8Bi0.2 sample, which is 52% higher than the conventionally doped Mg2Sn0.99Bi0.01, while comparable with the Mg2-δSn0.8Sb0.2. This work provides new insight into tuning thermoelectric transport properties through the atomic disorder strategy.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Simple Synthesis and Thermoelectric Properties of Mg2 + xSi0.5Sn0.5Sb0.075 Materials with Heterogeneous Microstructure

Jeongin Jang,Bok-Ki Min,Bong-Seo Kim,Sung-Jae Joo,Yong Il Park,Ji Eun Lee

DOI: https://doi.org/10.1007/s11814-024-00105-5

IF: 2.7

2024-02-15

Korean Journal of Chemical Engineering

Abstract:Mg 2 X (X = Si, Ge or Sn) based alloys are considered as promising candidates in the middle to high temperature range thermoelectric applications due to their low cost, nontoxicity and abundance of constituent elements. However, they exhibit relatively higher thermal conductivity compared to other thermoelectric materials. In this study, we present a simple synthetic method for a Mg 2 + x Si 0.5 Sn 0.5 Sb 0.075 material with a heterogeneous microstructure that reduces thermal conductivity. By controlling the amount of excess Mg during synthesis, a heterogeneous microstructure due to the formation of secondary phases was obtained. This heterogeneous microstructure reduced the thermal conductivity through phonon scattering, leading to an improved thermoelectric efficiency, particularly at high temperatures.

engineering, chemical,chemistry, multidisciplinary
Multiscale microstructures and improved thermoelectric performance of Mg 2 ( Si 0.4 Sn 0.6 ) Sb x solid solutions

xin zhang,hongliang liu,songhao li,feipeng zhang,qingmei lu,jingfeng li

DOI: https://doi.org/10.1142/S1793604714500362

IF: 1.4901

2014-01-01

Functional Materials Letters

Abstract:A series of Sb-doped Mg-2(Si0.4Sn0.6)Sb-x (0 <= x <= 0.025) solid solutions were prepared by an induction melting, Melt Spinning (MS) and Spark Plasma Sintering (SPS) method, namely the non-equilibrium technique MS-SPS, using bulks of Magnesium, Silicon, Tin, and Antimony as raw materials. The non-equilibrium technique generates the unique multiscale microstructures of samples containing micronscale grains and nanoscale precipitates, the multiscale microstructures remarkably make the lattice thermal conductivities decreased, particularly for samples with the nanoscale precipitates having the size of 10-20 nm. Meanwhile, Sb-doping greatly increased the electrical performance of samples. Consequently, the Sb-doping combined with the multiscale microstructures strategy remarkably improves the overall thermoelectric (TE) performance of Sb doped samples, and a high dimensionless figure of merit (ZT) value of up to 1.25 at 723K is obtained with Mg-2(Si0.4Sn0.6)Sb-0.02 sample in a relatively wide temperature range.
Lattice Strain and Band Overlap of the Thermoelectric Composite Mg2Si1−xSnx

Wenliang Yao,Shunbo Hu,Fanhao Jia,Jeffrey R. Reimers,Yin Wang,David J. Singh,Wei Ren

DOI: https://doi.org/10.1103/physrevb.106.104303

IF: 3.7

2022-01-01

Physical Review B

Abstract:Mg2Si1-xSnx solid solutions show enhanced thermoelectric performance when the Sn mole fraction x is approximately x = 0.7. This has been discussed in terms of complexity of the electronic structure arising from the crossover of two bottom conduction bands, but direct detailed understanding of the origins and the precise nature of this band convergence is limited. Here, we report first-principles calculations of the band edge changes analyzed by band unfolding and crystal orbital Hamilton population techniques. We find that strain is particularly important at this crossing. Mg2Si and Mg2Sn show opposite trends in the conduction band edge shifts leading to a band crossover at x similar to 0.625. However, there are also important effects due to disorder. Transport calculations show that enhancement of the figure of merit ZT value owes to the combined effects of lattice strain, band edge overlap, composition change, and disorder.
Influence of Ca Substitution on the Thermoelectric Properties of Mg2Si

GAO Hong-U,ZHU Tie-jun,ZHAO Xin-bing,LIU Xin-xin,FAN Dong-xiao

DOI: https://doi.org/10.14136/j.cnki.issn1673-2812.2010.02.018

2010-01-01

Abstract:Mg_(2-x)Ca_x Si(x=0, 0.03, 0.05, 0.07) thermoelectric materials have been prepared by solid state reaction and hot pressing techniques. The influence of Ca substitution on the thermoelectric properties has been investigated in detail. The XRD results proved that the prepared materials were single-phased. The electrical conductivity, Seebeck coefficient and thermal conductivity were measured. Because of the electro negativity and ionic radius difference between Ca and Mg, the substitution of Ca for Mg reduces the thermal conductivity obviously, and improves the thermoelectric properties.

Synergetic Effect of Zn Substitution on the Electron and Phonon Transport in Mg2Si0.5Sn0.5-based Thermoelectric Materials.

Roles of Interstitial Mg in Improving Thermoelectric Properties of Sb-doped Mg2Si0.4Sn0.6 Solid Solutions

Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation

Synergistic modulation of the thermoelectric performance of melt-spun p-type Mg 2 Sn via Na 2 S and Si alloying

Multiscale Defects as Strong Phonon Scatters to Enhance Thermoelectric Performance in Mg2Sn1-xSbx Solid Solutions

Effect of Sb Doping on the Thermoelectric Properties of Mg 2 Si 0.7 Sn 0.3 Solid Solutions

Thermoelectric performance enhancement of Mg2Sn based solid solutions by band convergence and phonon scattering via Pb and Si/Ge substitution for Sn

High Figures Of Merit And Natural Nanostructures In Mg2si0.4sn0.6 Based Thermoelectric Materials

Low electron scattering potentials in high performance Mg 2Si0.45Sn0.55 based thermoelectric solid solutions with band convergence

Effect of Sb Doping on the Thermoelectric Properties of Mg<sub>2</sub>Si<sub>0.7</sub>Sn<sub>0.3</sub> Solid Solutions

Mg Vacancy and Dislocation Strains As Strong Phonon Scatterers in Mg2Si1−xSbx Thermoelectric Materials

High Performance Mg2(Si,Sn) Solid Solutions: a Point Defect Chemistry Approach to Enhancing Thermoelectric Properties

Optimization of the thermoelectric performance of α-MgAgSb-based materials by Zn-doping

Variations of Thermoelectric Properties of Mg2.2si1-Ysny-0.013sb0.013 Materials with Different Si/Sn Ratios

Enhanced Thermoelectric Performance by Strong Phonon Scattering at the Heterogeneous Interfaces of the Mg 2 Sn/Mg 3 Sb 2 High-Content Nanocomposite

Thermodynamic criterions of the thermoelectric performance enhancement in Mg2Sn through the self-compensation vacancy

Maximized atomic disordering approach boost the thermoelectric performance of Mg2Sn through the self-compensation effect and steric effect

Simple Synthesis and Thermoelectric Properties of Mg2 + xSi0.5Sn0.5Sb0.075 Materials with Heterogeneous Microstructure

Multiscale microstructures and improved thermoelectric performance of Mg 2 ( Si 0.4 Sn 0.6 ) Sb x solid solutions

Lattice Strain and Band Overlap of the Thermoelectric Composite Mg2Si1−xSnx

Influence of Ca Substitution on the Thermoelectric Properties of Mg2Si