Fluorinated Graphene and Hexagonal Boron Nitride As ALD Seed Layers for Graphene-Based Van Der Waals Heterostructures.

Hongwei Guo,Yunlong Liu,Yang Xu,Nan Meng,Hongtao Wang,Tawfique Hasan,Xinran Wang,Jikui Luo,Bin Yu
DOI: https://doi.org/10.1088/0957-4484/25/35/355202
IF: 3.5
2014-01-01
Nanotechnology
Abstract:Ultrathin dielectric materials prepared by atomic-layer-deposition (ALD) technology are commonly used in graphene electronics. Using the first-principles density functional theory calculations with van der Waals (vdW) interactions included, we demonstrate that single-side fluorinated graphene (SFG) and hexagonal boron nitride (h-BN) exhibit large physical adsorption energy and strong electrostatic interactions with H2O-based ALD precursors, indicating their potential as the ALD seed layer for dielectric growth on graphene. In graphene-SFG vdW heterostructures, graphene is n-doped after ALD precursor adsorption on the SFG surface caused by vertical intrinsic polarization of SFG. However, graphene-h-BN vdW heterostructures help preserving the intrinsic characteristics of the underlying graphene due to in-plane intrinsic polarization of h-BN. By choosing SFG or BN as the ALD seed layer on the basis of actual device design needs, the graphene vdW heterostructures may find applications in low-dimensional electronics.
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