Abstract:Understanding charge transfer (CT) dynamics is important for controlling the tunneling mechanism of molecular devices consisting of molecular junctions. Synchrotron-based core-hole clock (CHC) spectroscopy can quantify the femtosecond-scale CT time τCT across the metal–molecule interface, which affects the current density (J) produced with applied bias (V) in the junctions. However, directly determining the tunneling behavior from a comparison of the CHC τCT and the J(V) measurement of a molecular junction (where the molecules are connect to two electrodes) requires prior knowledge of the molecular orbitals involved. To solve this problem, we examined CT dynamics across self-assembled monolayers (SAMs) based on oligophenylene ethynylene (OPE) wires with ferrocene (Fc) terminal groups with Au, Ag and Pt bottom electrodes. Density functional theory (DFT) helped identify the donor and acceptor levels, which are typically the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO). The measured J(V) response of the SAM junctions with gallium-indium (EGaIn) alloy as the top electrode demonstrates that the tunneling decay coefficient β provides an intensive parameter to assess CT efficiency. We find that more delocalized molecular wavefunctions (in this case, LUMO+2, with contributions from Fc and OPE) facilitate faster and more efficient CT than more localized acceptor levels (here, the more iron-centered LUMO+1). These orbital-specific effects explain why we measure comparable β values for CT via LUMO+1 and J via HOMO and LUMO at –1 V bias. Our study highlights the utility of τCT measured by CHC in experimentally confirming the orbitals participating in charge transport measurements and shows that higher-lying delocalized orbitals can in some instances dominate over frontier orbitals despite larger energy offset (or increase in tunneling barrier height).

Dependency of the tunneling decay coefficient in molecular tunneling junctions on the topography of the bottom electrodes.

A Single-Level Tunnel Model to Account for Electrical Transport through Single Molecule- and Self-Assembled Monolayer-based Junctions

One-Nanometer Thin Monolayers Remove the Deleterious Effect of Substrate Defects in Molecular Tunnel Junctions.

Investigating Molecular Junctions Based on Mixed Self-Assembled Monolayers to Understand the Impact of Intermolecular Interactions on Transport

Control of Relative Tunneling Rates in Single Molecule Bipolar Electron Transport

Resolving Charge Transfer Mechanisms in Molecular Tunnel Junctions using Dynamic Charge Transfer and Static Current-Voltage Measurements

Dynamically blocking leakage current in molecular tunneling junctions

Low Tunneling Decay of Iodine-Terminated Alkane Single-Molecule Junctions

Can tunneling current in molecular junctions be so strongly temperature dependent to challenge a hopping mechanism? Analytical formulas answer this question and provide important insight into large area junctions

Large cooperative effects in tunneling rates across van der Waals coupled binary self-assembled monolayers

Temperature Dependent Charge Transport Across Tunnel Junctions of Single-Molecules and Self-Assembled Monolayers: A Comparative Study

Tunneling Rates In Electron Transport Through Double-Barrier Molecular Junctions In A Scanning Tunneling Microscope

Modeling Klein Tunneling and Caustics of Electron Waves in Graphene

Anomalously Rapid Tunneling: Charge Transport across Self-Assembled Monolayers of Oligo(ethylene glycol)

Measurement and Statistical Analysis of Single-Molecule Current-Voltage Characteristics, Transition Voltage Spectroscopy, and Tunneling Barrier Height.

Structural details of Al/Al2O3 junctions and their role in formation of electron tunnel barriers

On the Remarkable Role of Surface Topography of the Bottom Electrodes in Blocking Leakage Currents in Molecular Diodes

In Situ Cds Nanocluster Formation On Scanning Tunneling Microscopy Tips For Reliable Single-Electron Tunneling At Room Temperature

Fabrication of stable and reproducible sub-micron tunnel junctions

The effect of atomic structure on the electrical response of aluminium oxide tunnel junctions

Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $δ$-layer tunnel junctions