A Multilevel Intermediate-Band Solar Cell by InGaN/GaN Quantum Dots with a Strain-Modulated Structure.

Liwen Sang,Meiyong Liao,Qifeng Liang,Masaki Takeguchi,Benjamin Dierre,Bo Shen,Takashi Sekiguchi,Yasuo Koide,Masatomo Sumiya
DOI: https://doi.org/10.1002/adma.201304335
2013-01-01
Abstract:Multiple stacked InGaN/GaN quantum dots are embedded into an InGaN p-n junction to develop multilevel intermediateband (MIB) solar cells. An IB transition is evidenced from both experiment and theoretical calculations. The MIB solar cell shows a wide photovoltaic response from the UV to the near-IR region. This work opens up an interesting opportunity for high-efficiency IB solar cells in the photovoltaics field.
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