Fluorenyl-Substituted Silole Molecules: Geometric, Electronic, Optical, and Device Properties
Xiaowei Zhan,Andreas Haldi,Chad Risko,Calvin K. Chan,Wei Zhao,Tatiana V. Timofeeva,Aleksander Korlyukov,Mikhail Yu. Antipin,Sarah Montgomery,Evans Thompson,Zesheng An,Benoit Domercq,Stephen Barlow,Antoine Kahn,Bernard Kippelen,Jean-Luc Bredas,Seth R. Marder
DOI: https://doi.org/10.1039/b803470b
2008-01-01
Journal of Materials Chemistry
Abstract:A series of silole molecules with fluorenyl substituents at varying positions-1-(9,9-dimethylfluoren-2-yl)-1,2,3,4,5-pentaphenylsilole, 1-(fluoren-9-yl)-1,2,3,4,5-pentaphenylsilole, 1,1,3,4-tetraphenyl-2, 5-bis(9,9-dimethylfluoren-2-yl) silole, and 1,1-diphenyl-2,3,4,5-tetrakis(9,9-dimethylfluoren-2-yl)silole-has been synthesized and compared to the previously reported compounds, 1,1,2,3,4,5-hexaphenylsilole and 1,1-bis(9,9-dimethylfluoren-2-yl)-2,3,4,5-tetraphenylsilole. The effect of fluorenyl substitution pattern on the geometric, thermal, electronic, optical, and electroluminescence properties was investigated both experimentally and theoretically. Analysis of the X-ray crystal packing diagrams for two new fluorenyl-substituted siloles indicates the presence of pi-pi stacking and CH center dot center dot center dot pi interactions in the solid state. Across the series, excellent thermal and morphological stabilities are displayed. Photoelectron/inverse-photoelectron spectroscopy measurements and density functional theory (DFT) calculations suggest that increased conjugation length through substitution at the 2- and 5-positions plays a more significant role in tuning the ionization potentials and electron affinities of these siloles than do inductive effects through substitution of the silicon. The electronic structure (e. g., HOMO-LUMO gap) and, hence, the optical absorption and fluorescence properties are also sensitive to the positions at which the fluorenyl groups are introduced, with substitution at the 2,5-positions having the largest effect. Solution-processed electroluminescent devices fabricated with the fluorenyl-substituted siloles as the emissive layer have luminous efficiencies as high as 3.6 cd A(-1).