Abstract:Magnetic field-driven insulating states in graphene are associated with samples of very high quality. Here, this state is shown to exist in monolayer graphene grown by chemical vapor deposition (CVD) and wet transferred on Al2O3 without encapsulation with hexagonal boron nitride (h-BN) or other specialized fabrication techniques associated with superior devices. Two-terminal measurements are performed at low temperature using a GaAs-based multiplexer. During high-throughput testing, insulating properties are found in a 10 μm long graphene device which is 10 μm wide at one contact with an ≈440 nm wide constriction at the other. The low magnetic field mobility is ≈6000 cm2 V-1 s-1. An energy gap induced by the magnetic field opens at charge neutrality, leading to diverging resistance and current switching on the order of 104 with DC bias voltage at an approximate electric field strength of ≈0.04 V μm-1 at high magnetic field. DC source-drain bias measurements show behavior associated with tunneling through a potential barrier and a transition between direct tunneling at low bias to Fowler-Nordheim tunneling at high bias from which the tunneling region is estimated to be on the order of ≈100 nm. Transport becomes activated with temperature from which the gap size is estimated to be 2.4 to 2.8 meV at B = 10 T. Results suggest that a local electronically high quality region exists within the constriction, which dominates transport at high B, causing the device to become insulating and act as a tunnel junction. The use of wet transfer fabrication techniques of CVD material without encapsulation with h-BN and the combination with multiplexing illustrates the convenience of these scalable and reasonably simple methods to find high quality devices for fundamental physics research and with functional properties.

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Solid-State Synthesis of Graphene by Induction Heating

Graphene synthesis by electromagnetic induction heating: Domain size and morphology control

Design and Simulation of High-Temperature Micro-Hotplate for Synthesis of Graphene Using uCVD Method

Solar-thermal cold-wall chemical vapor deposition reactor design and characterization for graphene synthesis

Large area graphene synthesis on catalytic copper foil by an indigenous electron cyclotron resonance plasma enhanced chemical vapor deposition setup

Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices.

Design and Numerical Study of Induction-Heating Graphitization Furnace Based on Graphene Coils

Rapid roll-to-roll production of graphene films using intensive Joule heating

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

A Fast Transfer-Free Synthesis Of High-Quality Monolayer Graphene On Insulating Substrates By A Simple Rapid Thermal Treatment

Synthesis of Transfer-Free Graphene on Cemented Carbide Surface.

Preparation of meter-scale Cu foils with decimeter grains and the use for the synthesis of graphene films

Insulating SiO 2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Ultrafast Growth of Highly Conductive Graphene Films by a Single Subsecond Pulse of Microwave

100-Gram Batch Production of Graphene Using High-Power Rapid Joule Heating Method

Highly Efficient Growth of Large‐Sized Uniform Graphene Glass in Air by Scanning Electromagnetic Induction Quenching Method

Low Temperature Growth of Graphene on Semiconductor

Epitaxial Growth of 6 In. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C Via Chemical Vapor Deposition

Giant Magnetoresistance in a Chemical Vapor Deposition Graphene Constriction