Abstract:HgTe/CdTe quantum well is a typical two dimensional topological material which supports the helical edge states and quantum spin Hall effect that is imposing in applying of spin electronic devices. The special plateau valued with \begin{document}$0.25\;h/e^{2}$\end{document} of nonlocal resistance in H-shaped four terminal devices can be used as the fingerprint of quantum spin Hall effect. Based on the HgTe/CdTe quantum well, with the aid of nonequilibrium Green's function theory and multi-terminal Landauer-Büttiker formula, we calculate the nonlocal resistance and study the dephasing effect of spin topological states in the presence of exchange field and external magnetic field. It is found the dephasing processes play a role completely different from exchange field and external magnetic field. The latter destroy time reversal symmetry and change the width and relative position of topological gap, but do not influent the topological stability of helical edge states. In the contrary, dephasing processes don't change the width and relative position, however, they broke the topological stability. We consider two kinds of dephasing: normal dephasing and spin dephasing. In the first kind, the carriers lose only the phase memory while maintaining the spin memory. In the second kind, the carriers lose both phase and spin memories. Because of the spin locking properties, normal dephasing almost have no influence on the helical edge states. While the spin dephasing will induce spin flip backscattering and finally destroy helical edge states seriously.

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Time-Reversal-Symmetry-Broken Quantum Spin Hall Effect

Time-reversal-breaking Induced Quantum Spin Hall Effect

Time-Reversal Symmetry Protected Chiral Interface States Between Quantum Spin And Quantum Anomalous Hall Insulators

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Quantum Spin Hall Materials (adv. Quantum Technol. 10/2019)

Finite Size Effects on Helical Edge States in a Quantum Spin-Hall System

Robust AC Quantum Spin Hall Effect without Participation of Edge States

Transversal Propagation of Helical Edge States in Quantum Spin Hall Systems

Reentrant quantum spin Hall effect in the presence of an exchange field

Topological Insulator: A New Quantized Spin Hall Resistance Robust to Dephasing

Stability of Time-Reversal Symmetry Protected Topological Phases

Effective Spin Dephasing Mechanism in Confined Two-Dimensional Topological Insulators

Influence Of Dephasing On The Quantum Hall Effect And The Spin Hall Effect

Quantum spin Hall effect.

Edge Mode of Inas/Gasb Quantum Spin Hall Insulator in Magnetic Field

Quantum spin Hall effect protected by spin U(1) quasisymmetry

Quantum Spin Hall Effect in a Square-Lattice Model under a Uniform Magnetic Field

Antiferromagnetic Quantum Spin Hall States in Iron Halogenide

Determination of the Helical Edge and Bulk Spin Axis in Quantum Spin Hall Insulator WTe2

Dephasing Effect of Quantum Spin Topological States in HgTe/CdTe Quantum Well