Abstract:Ultrafast thermomechanical responses of silicon thin films due to ultrashort-pulsed laser irradiation were investigated using an atomic-level hybrid method coupling the molecular dynamics and the ultrafast two-step energy transport model. The dynamic reflectivity and absorption were considered, and the effects of laser fluence and pulse duration on the thermomechanical response were studied. It was found that both the carrier temperature and number density rapidly increase to their maximum while the lattice temperature rises at a much slower rate. The ultrafast laser heating could induce a strong stress wave in the film, with the maximum compressive and tensile stress occurring near the front and back surfaces, respectively. For laser pulses of the same duration, the higher the laser fluence is, the higher the carrier temperature and density and lattice temperature are induced. For the same laser fluence, a longer pulse generally produces lower carrier density and temperatures and weaker stress shock strength. However, for the fluence of 0.2 J/cm(2), the lowest lattice temperature was simulated for a 100-fs pulse compared to the 1-ps and 5-ps pulses, due to the increase of reflectivity by high carrier density. It is also shown that the optical properties as functions of lattice temperature usually employed are not suited for modeling ultrafast laser interactions with silicon materials.

Light Absorption Engineering of Hydrogenated Nanocrystalline Silicon by Femtosecond Laser

Tunable Nonlinear Absorption of Hydrogenated Nanocrystalline Silicon.

Separation of Mid-IR Light Trapping and Sulfur-Donor Absorption in Nanosecond-Laser Sulfur-Hyperdoped Silicon: a Way to Spatially- and Spectrally-Engineered Interband IR-Absorption

Light Absorption Enhancement of Amorphous Silicon Film Coupled with Metal Nanoshells

Controllable Nonlinear Refraction Characteristics in Hydrogenated Nanocrystalline Silicon

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Great enhancement of infrared light absorption of silicon surface-structured by femtosecond laser pulses in N2 ambient

Numerical Simulations of Germanium Nanofilm under Femtosecond Pulse Laser Heating

Resonant Optical Properties of Crystalline Silicon Nanoparticles Fabricated by Laser Ablation-Based Methods

Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays.

Structural Evolution and Effective Improvement of Emission Quantum Yields for Silicon Nanocrystals Synthesized by Femtosecond Laser Ablation in HF-contained Solution

Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring

Femtosecond Laser-Induced Size Reduction And Emission Quantum Yield Enhancement Of Colloidal Silicon Nanocrystals: Effect Of Laser Ablation Time

Direct observation and quantification of nanosecond laser induced amorphization inside silicon

Photocurrent Response of Hydrogenated Nanocrystalline Silicon Thin Films

Femtosecond Laser Induced Nanocone Structure and Simultaneous Crystallization of 1.6 Μm Amorphous Silicon Thin Film for Photovoltaic Application

Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation

The Microstructure and Optical Properties of Crystallized Hydrogenated Silicon Films Prepared by Very High Frequency Glow Discharge