Abstract:Understanding the electronic charge distribution around oxygen vacancies in transition metal and rare earth oxides is a scientific challenge of considerable technological importance. We show how significant information about the charge distribution around vacancies in cerium oxide can be gained from a study of high resolution crystal structures of higher order oxides which exhibit ordering of oxygen vacancies. Specifically, we consider the implications of a bond valence sum analysis of Ce₇O₁₂ and Ce₁₁O₂₀. To illuminate our analysis we show alternative representations of the crystal structures in terms of orderly arrays of coordination defects and in terms of fluorite-type modules. We found that in Ce₇O₁₂, the excess charge resulting from removal of an oxygen atom delocalizes among all three triclinic Ce sites closest to the O vacancy. In Ce₁₁O₂₀, the charge localizes on the next nearest neighbour Ce atoms. Our main result is that the charge prefers to distribute itself so that it is farthest away from the O vacancies. This contradicts the standard picture of charge localization which assumes that each of the two excess electrons localizes on one of the cerium ions nearest to the vacancy. This standard picture is assumed in most calculations based on density functional theory (DFT). Based on the known crystal structure of Pr₆O₁₁, we also predict that the charge in Ce₆O₁₁ will be found in the second coordination shell of the O vacancy. We also extend the analysis to the Magnéli phases of titanium and vanadium oxides (M(n)O(₂n₋₁), where M = Ti, V) and consider the problem of metal-insulator transitions (MIT) in these oxides. We found that the bond valence analysis may provide a useful predictive tool in structures where the MIT is accompanied by significant changes in the metal-oxygen bond lengths. Although this review focuses mainly on bulk cerium oxides with some extension to the Magnéli phases of titanium and vanadium, our approach to characterizing electronic properties of oxygen vacancies and the physical insights gained should also be relevant to surface defects and to other rare earth and transition metal oxides.

Electron Localization in Defective Ceria Films: a Study with Scanning-Tunneling Microscopy and Density-Functional Theory.

Electron localization in pure and defective ceria by a unified LDA+U approach

The electronic structure of oxygen vacancy defects at the low index surfaces of ceria

Probing the 4f states of ceria by tunneling spectroscopy

Charge Distribution Near Oxygen Vacancies in Reduced Ceria

Density functional study of oxygen vacancy formation and spin density distribution in octahedral ceria nanoparticles

Charge distribution near bulk oxygen vacancies in cerium oxides

Unveiling the Structure of Oxygen Vacancies in Bulk Ceria and the Physical Mechanisms behind Their Formation

Morphology and defect structure of the CeO2(111) films grown on Ru(0001) as studied by scanning tunneling microscopy

Imaging Vacancy Defects in Single-Layer Chromium Triiodide

Polaronic defects in monolayer CeO2: Quantum confinement effect and strain engineering

Quantitative nanoscale tracking of oxygen vacancy diffusion inside single ceria grains by in situ transmission electron microscopy

Chemical Strain and Point Defect Configurations in Reduced Ceria

Morphology and defect structure of the CeO2(1 1 1) films grown on Ru(0 0 0 1) as studied by scanning tunneling microscopy

Oxygen vacancy distributions and electron localization in a CeO 2 (100) nanocube

The Structure of Oxygen Vacancies in the Near-Surface of Reduced CeO2 (111) Under Strain

Oxygen Adatoms and Vacancies on the (110) Surface of CeO2

Effect of defect states and oxygen vacancies on optical transitions due to Co2+ substitution in CeO2

A polaron cloud of correlated electron states in ceria

The role of oxygen defects on the electro-chemo-mechanical properties of highly defective gadolinium doped ceria

Oxygen Vacancy Distributions and Electron Localization in a CeO2(100) Nanocube