Abstract:An earlier experimental study by scanning tunneling microscopy (STM) from this laboratory described the use of "localized reaction" as a means to the electron- or photon-imprinting of self-assembled patterns of CH(3)Br(ad) as covalently bound Br-Si(s) at Si(111)-7x7. Here we show that the thermal surface bromination reaction by CH(3)Br(ad) is also highly localized, and present a detailed ab initio dynamical model for the reaction, using DFT. Localization is seen to be due to the coexistence in the reactive transition-state of the neighboring bonds being broken (C-Br) and formed (Br-Si). Both experiment and theory are consistent with a low energy-barrier, E(a) approximately 0.2 eV, for the thermal bromination of Si(111) by CH(3)Br(ad), and also for the desorption of intact CH(3)Br(g) (E(des) approximately 0.2 eV). Two physisorbed states of CH(3)Br(ad)/Si(111) (I and II) are distinguishable by STM at 50 K by their differing displacement from the underlying Si adatom. These states can be identified with similarly displaced states in the STM images simulated by DFT. At the elevated temperature of 80 K, a markedly displaced physisorbed state (III) appears in the STM image, indicated by DFT to have a configuration encountered along the reaction path immediately prior to the transition state. The electron-induced bromination of Si(111) by CH(3)Br(ad), and also electron-induced molecular desorption, are examined as a function of the energy of the incident electron, giving for both processes a threshold energy of E(e) approximately 1.8 eV in accord with ab initio theory, and a substantial yield of 10(-6) to 10(-5) Br-Si(s)/electron.

Calibrating Thermal and Scanning Tunnelling Microscope Induced Desorption and Diffusion for the Chemisorbed Chlorobenzene/si(111)7 × 7 System

Mechanisms of Molecular Manipulation with the Scanning Tunneling Microscope at Room Temperature: Chlorobenzene/si(111)-(7 X 7).

Concerted Thermal-Plus-Electronic Nonlocal Desorption of Chlorobenzene from Si(111)-7 × 7 in the STM.

Manipulation of Polyatomic Molecules with the Scanning Tunnelling Microscope at Room Temperature: Chlorobenzene Adsorption and Desorption from Si(111)-(7 × 7)

Non-local Atomic Manipulation on Semiconductor Surfaces in the STM: the Case of Chlorobenzene on Si(111)-7×7.

Nonlocal STM Manipulation of Chlorobenzene on Si(111)-7 × 7: Potentials, Kinetics, and First-Principles Molecular Dynamics Calculations for Open Systems

Mapping the Site-Specific Potential Energy Landscape for Chemisorbed and Physisorbed Aromatic Molecules on the Si(1 1 1)-7 × 7 Surface by Time-Lapse STM.

Quantum Chemical Approach to Atomic Manipulation of Chlorobenzene on the Si(111)-7×7 Surface: Resonance Localization, Vibrational Activation, and Surface Dynamics

Nonlocal Desorption of Chlorobenzene Molecules from the Si(111)-(7×7) Surface by Charge Injection from the Tip of a Scanning Tunneling Microscope: Remote Control of Atomic Manipulation.

Scanning Tunneling Microscopy of Photoexcited Carriers at the Si(001) Surface

Molecular Dynamics of Localized Reaction, Experiment and Theory: Methyl Bromide on Si(111)-7x7

Quantum Chemical Cluster Models for Chemi- and Physisorption of Chlorobenzene on Si(111)-7×7.

High-Resolution Scanning Tunneling Microscopy Imaging Of Si(111)-7 X 7 Structure And Intrinsic Molecular States

A new mechanism of atomic manipulation: bond-selective molecular dissociation via thermally activated electron attachment.

High-Resolution Scanning Tunneling Microscopy for Molecules

Two-Electron Dissociation of Single Molecules by Atomic Manipulation at Room Temperature

Investigating charge transfer dynamics at the nanoscale

High-resolution Scanning Tunneling Microscopy Imaging of Si(1 1 1)-7 × 7 Structure and Intrinsic Molecular States

Initiating and Imaging the Coherent Surface Dynamics of Charge Carriers in Real Space

Scanning Tunneling Microscopy for Molecules: Effects of Electron Propagation into Vacuum

Theoretical Investigation of an Intermediate in the STM Tip-Induced Atomic Process on H/Si(100) Surfaces