The E-Field Induced Volatile and Nonvolatile Magnetization Switchingof CoNi Thin Films in CoNi/PMN-PT Heterostructures

Tianli Jin,Jiangwei Cao,Liang Hao,Mingfeng Liu,Ying Wang,Dongping Wu,Jianmin Bai,Fulin Wei
DOI: https://doi.org/10.1109/tmag.2015.2443179
IF: 1.848
2015-01-01
IEEE Transactions on Magnetics
Abstract:In this paper, we report the giant electric-field (E-field)-induced magnetic anisotropy and magnetization switching in CoNi/Pb(Mg1/3Nb2/3)O3-xPbTiO3(PMN-PT) magnetoelectric heterostructures. For CoNi/PMN-30% PT, the E-field-induced anisotropy shows a volatile behavior; whereas for CoNi/PMN-32% PT, a large and nonvolatile E-field-induced anisotropy field up to 54 kA/m is observed. These behaviors can be understood by measuring the strain versus the E-field curves of two kinds of substrates. On the basis of the E-field-induced nonvolatile magnetic switching, two stable magnetization states defined by applying E-field pulses were demonstrated in CoNi/PMN-32% PT heterostructure, which paves a new way for voltage-write magnetic random memory devices.
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