Research on 3300V IGBTs' Switching Characteristics and Design the Gate Drive Circuit

Jun Huang,Yue Wang,Jingyu Lei,Ming Li,Wanjun Lei

DOI: https://doi.org/10.1109/apec.2012.6165813

2012-01-01

Abstract:In this work, 3300V IGBT switching characteristics are analyzed. Based on the experimental results, influences of the gate resistor and the external capacitor connected between the gate and emitter are studied. How the DC voltage and load current affect the switching transients is also analyzed. Besides, the gate drive circuit for 3300V IGBTs is designed. To improve the switching transient, a novel circuit of a transient voltage suppressor (TVS) with a capacitor is proposed and applied while experimental results show that the circuit has a good performance. Furthermore, the short-circuit test is done to verify the short-circuit protection of the gate drive.