Excitonic and Semiconductor Bloch Equation Approaches to Carrier Dvnamics in Semiconductors

Wang, Dawei,Dignam, M.M.

DOI: https://doi.org/10.1109/qels.2007.4431566

2007-01-01

Abstract:We compare the ultrafast optical response of a nanoring using the semiconductor Bloch equations and our excitonic equations, where phase space filling is included. We demonstrate the potential advantages of the excitonic approach.

What problem does this paper attempt to address?

Excitonic Approach to the Ultrafast Optical Response of Semiconductors

Dawei Wang,Marc M. Dignam

DOI: https://doi.org/10.1103/physrevb.76.115311

IF: 3.7

2007-01-01

Physical Review B

Abstract:We present a theoretical approach to treating the coherent dynamics of optically generated charge carriers in semiconductors using an excitonic basis. In contrast to the semiconductor Bloch equations, our approach treats intraband correlations without factorization. It also includes phase space filling effects that have generally been omitted in previous excitonic treatments of coherent dynamics. We show that, in the coherent limit, where the intraband dephasing time and population decay time are both equal to half of the interband dephasing time, our excitonic approach agrees with the semiconductor Bloch equations to at least third order in the optical field, but that it differs significantly in more general situations. Our excitonic equations are shown to be particularly applicable in systems, such as biased semiconductor superlattices, where bound excitons dominate the optical response and where intraband correlations play a central role. Using a simple model of a nanoring, we show how the spectral shifts in the interband response can be explained in terms of phase-space-filling-induced excitonic population dynamics.
An Excitonic Approach to the Intraband THz Response of Semiconductor Nanostructures

Marc M. Dignam,Fredrik Sy,Andrew M. Parks,Dawei Wang

DOI: https://doi.org/10.1063/1.4870190

2014-01-01

AIP Conference Proceedings

Abstract:Considerable effort has been devoted in recent years to developing an accurate and computationally-viable theoretical treatment of the THz response of semiconductor nanostructures that are excited by ultrashort optical pulses. Although most approaches, such as the semiconductor Bloch equations, employ an electron-hole basis, we have developed an excitonic approach that has significant advantages in many situations. Our approach includes the exchange interaction between excitons, the effects of the Pauli exclusion principle for the excitons (which are composite Bosons), and the dipole-dipole interactions between excitons. In this paper we review our excitonic formalism and apply it to examine the THz absorption of optically-excited CdSe nanorods and 2D GaAs quantum wells.
Computational Modeling Of Optical Response From Excitons In A Nano Optical Medium

Yuanchang Sun,Hiroshi Ajiki,Gang Bao

IF: 3.791

2008-01-01

Communications in Computational Physics

Abstract:Consider a time-harmonic electromagnetic plane wave incident on a microscopic semiconductor. Inside the medium, at any given frequency omega, more than one polariton mode can arise with the same frequency but different wavenumbers due to the presence of excitons. Besides Maxwell's boundary conditions, additional boundary conditions are required to handle the multi-mode polariton. In order to model the confinement effect of excitons in the microscopic semiconductor, Maxwell's equations and the Schrodinger equation are coupled to characterize the polarization in terms of the quantum description. In the weak confinement regime, we derive a perturbed dispersive dielectric constant by taking the exciton effect into account. We also analyze and compute the optical linear response of the exciton in both one-dimensional and two-dimensional confinements. For the one-dimensional case, the existence and uniqueness of the analytical solution are established in the resonance region. A finite difference method is developed to compute the two dimensional confinement.
Many-body effects on excitonic optical properties of photoexcited semiconductor quantum wire structures

D. W. Wang,S. Das Sarma

DOI: https://doi.org/10.1103/physrevb.64.195313

IF: 3.7

2001-10-17

Physical Review B

Abstract:We study carrier-interaction-induced many-body effects on the excitonic optical properties of highly photoexcited one-dimensional semiconductor quantum wire systems by solving the dynamically screened Bethe-Salpeter equation using realistic Coulomb interaction between carriers. Including dynamical screening effects in the electron-hole self-energy and in the electron-hole interaction vertex function, we find that the excitonic absorption is essentially peaked at a constant energy for a large range of photoexcitation density (n=0–6×105 cm-1), above which the absorption peak disappears without appreciable gain; i.e., no exciton to free electron-hole plasma Mott transition is observed, in contrast to previous theoretical results but in agreement with recent experimental findings. This absence of gain (or the nonexistence of a Mott transition) arises from the strong inelastic scattering by one-dimensional plasmons or charge density excitations, closely related to the non-Fermi-liquid nature of one-dimensional systems. Our theoretical work demonstrates a transition or a crossover in one-dimensional photoexcited electron-hole systems from an effective Fermi liquid behavior associated with a dilute gas of noninteracting excitons in the low-density region (n<105 cm-1) to a non-Fermi liquid in the high-density region (n>105 cm-1). The conventional quasistatic approximation for this problem is also carried out to compare with the full dynamical results. Numerical results for exciton binding energy and absorption spectra are given as functions of carrier density and temperature.

physics, condensed matter, applied,materials science, multidisciplinary
A Hybrid Method for Integrated Atomistic-Continuum Simulation of Ultrashort-Pulsed Laser Interaction with Semiconductors

Yong Gan,J. K. Chen

DOI: https://doi.org/10.1016/j.cpc.2011.10.002

IF: 4.717

2012-01-01

Computer Physics Communications

Abstract:A numerical method coupling the molecular dynamics and the two-step energy transfer model is presented for simulating ultrafast responses of semiconductors irradiated by ultrashort-pulsed lasers. In this method, an additional damping force characterizing the carrier-lattice heat exchange is added to the equations of motion of atoms in the molecular dynamics. The explicit finite difference algorithms are applied for obtaining the laser energy distribution and the carrier density evolution, whereas a semi-implicit finite difference scheme is developed as for the carrier temperature field. Examples of a thin silicon film subjected to femtosecond laser heating are utilized to validate and demonstrate this hybrid method. Results show that the proposed method is able to effectively describe not only the thermal transport but also the thermal stress wave in the ultrafast laser–semiconductor interactions.
Transient Superdiffusion of Energetic Carriers in Transition Metal Dichalcogenides Visualized by Ultrafast Pump-Probe Microscopy

Yun-Ke Zhou,Xiao-Ze Li,Qian-Ni Zhou,Ren-Hao Xing,Yan Zhang,Benfeng Bai,Hong-Hua Fang,Hong -Bo Sun

DOI: https://doi.org/10.34133/ultrafastscience.0002

2022-01-01

Ultrafast Science

Abstract:Because of the strong Coulomb interaction and quantum confinement effect, 2-dimensional transition metal dichalcogenides possess a stable excitonic population. To realize excitonic device applications, such as excitonic circuits, switches, and transistors, it is of paramount importance for understanding the optical properties of transition metal dichalcogenides. Furthermore, the strong quantum confinement in 2-dimensional space introduces exotic properties, such as enhanced phonon bottlenecking effect, many-body interaction of excitons, and ultrafast nonequilibrium exciton–exciton annihilation. Exciton diffusion is the primary energy dissipation process and a working horse in excitonic devices. In this work, we investigated time-resolved exciton propagation in monolayer semiconductors of WSe2, MoWSe2, and MoSe2, with a home-built femtosecond pump-probe microscope. We observed ultrafast exciton expansion behavior with an equivalent diffusivity of up to 502 cm2 s−1 at the initial delay time, followed by a slow linear diffusive regime (20.9 cm2 s−1) in the monolayer WSe2. The fast expansion behavior is attributed to energetic carrier-dominated superdiffusive behavior. We found that in the monolayers MoWSe2 and MoSe2, the energetic carrier-induced exciton expansion is much more effective, with diffusivity up to 668 and 2295 cm2 s−1, respectively. However, the “cold” exciton transport is trap limited in MoWSe2 and MoSe2, leading to negative diffusion behavior at later time. Our findings are helpful to better understand the ultrafast nonlinear diffusive behavior in strongly quantum-confined systems. It may be harnessed to break the limit of conventional slow diffusion of excitons for advancing more efficient and ultrafast optoelectronic devices.
Ultrafast Carrier Dynamics Of Bi2o2se Nanoplates In The Nonlinear Excitation Regime

Yadong Han,Yonggang Liu,Chun Gu,Hang Zhang,Pengxian You,Jing Yang,Xiang Ding,Liang Qiao,Oleg V. Misochko,Jianbo Hu

DOI: https://doi.org/10.1016/j.chemphys.2020.111017

IF: 2.552

2021-01-01

Chemical Physics

Abstract:Carrier-phonon interactions play a key role in low-dimensional semiconductors which have attracted great interest due to their rich physics and the potential for tailoring the electron mobility or thermal conductivity for device applications. In this work, we present new insights into the interaction between photo-induced carriers and lattice phonons in a representative quasi-layered material without a well-defined van der Waals gap, Bi2O2Se, through ultrafast time-resolved optical pump-probe measurements. Results reveal that in the nonlinear excitation regime, the phonon-assisted carrier relaxation in Bi2O2Se nanoplates follows a bi-exponential decay process and exhibits pump fluence-dependent relaxation times. This two-stage relaxation can be qualitatively explained by a phenomenological three-temperature model that considers energy exchange between three coupled subsystems (electrons, in-plane and out-of-plane phonons). This work expands the current understanding of carrier dynamics in Bi2O2Se and may pave the way for enhancing the performance of related optoelectronic applications.
Carrier diffusion in semiconductor nanoscale resonators

Marco Saldutti,Yi Yu,George Kountouris,Philip Trøst Kristensen,Jesper Mørk

2023-08-31

Abstract:It is shown that semiconductor nanoscale resonators with extreme dielectric confinement accelerate the diffusion of electron-hole pairs excited by nonlinear absorption. These novel cavity designs may lead to optical switches with superior modulation speeds compared to conventional geometries. The response function of the effective carrier density is computed by an efficient eigenmode expansion technique. A few eigenmodes of the diffusion equation conveniently capture the long-timescale carrier decay rate, which is advantageous compared to time-domain simulations. Notably, the eigenmode approach elucidates the contribution to carrier diffusion of the in-plane and out-of-plane cavity geometry, which may guide future designs.

Optics,Computational Physics
Diagrammatic approach to excitonic effects on nonlinear optical response

Yu-Tzu Chang,Yang-Hao Chan

2023-10-27

Abstract:Optical responses of atomically thin 2D materials are greatly influenced by electron-hole interactions. It is by far established that exciton signatures can be well-identified in the optical absorption spectrum of quasi-2D materials. However, the same level of understanding of excitonic effects on nonlinear optical responses and the ability to compute them accurately is still much desired. Based on the functional integral formalisms and working in the velocity gauge, we introduce a convenient Feynman diagram approach for calculating nonlinear responses including excitonic effects. By dressing electron-photon interactions with electron-hole ladder diagrams, we derive an expression for second-order optical responses and provide a comprehensive description of excitonic effects. We apply our approach to a monolayer h-BN model and show qualitative changes in the second harmonic generation spectrum when comparing with results assuming independent particles. Our approach can be readily extended to higher order optical responses and is feasible for first-principles calculations.

Mesoscale and Nanoscale Physics,Materials Science
Diffusion of Excitons in a Two-Dimensional Fermi Sea of Free Charges

Koloman Wagner,Zakhar A Iakovlev,Jonas D Ziegler,Marzia Cuccu,Takashi Taniguchi,Kenji Watanabe,Mikhail M Glazov,Alexey Chernikov

DOI: https://doi.org/10.1021/acs.nanolett.2c03796

2023-06-14

Abstract:Propagation of light-emitting quasiparticles is of central importance across the fields of condensed matter physics and nanomaterials science. We experimentally demonstrate diffusion of excitons in the presence of a continuously tunable Fermi sea of free charge carriers in a monolayer semiconductor. Light emission from tightly bound exciton states in electrically gated WSe2 monolayer is detected using spatially and temporally resolved microscopy. The measurements reveal a nonmonotonic dependence of the exciton diffusion coefficient on the charge carrier density in both electron and hole doped regimes. Supported by analytical theory describing exciton-carrier interactions in a dissipative system, we identify distinct regimes of elastic scattering and quasiparticle formation determining exciton diffusion. The crossover region exhibits a highly unusual behavior of an increasing diffusion coefficient with increasing carrier densities. Temperature-dependent diffusion measurements further reveal characteristic signatures of freely propagating excitonic complexes dressed by free charges with effective mobilities up to 3 × 103 cm2/(V s).
Influence of local fields on the dynamics of four-wave mixing signals from 2D semiconductor systems

Thilo Hahn,Jacek Kasprzak,Paweł Machnikowski,Tilmann Kuhn,Daniel Wigger

DOI: https://doi.org/10.48550/arXiv.2102.12812

2021-02-25

Mesoscale and Nanoscale Physics

Abstract:In recent years the physics of two-dimensional semiconductors was revived by the discovery of the class of transition metal dichalcogenides. In these systems excitons dominate the optical response in the visible range and open many perspectives for nonlinear spectroscopy. To describe the coherence and polarization dynamics of excitons after ultrafast excitation in these systems, we employ the Bloch equation model of a two-level system extended by a local field describing the exciton-exciton interaction. We calculate four-wave mixing signals and analyze the dependence of the temporal and spectral signals as a function of the delay between the exciting pulses. Exact analytical results obtained for the case of ultrafast ($\delta$-shaped) pulses are compared to numerical solutions obtained for finite pulse durations. If two pulses are used to generate the nonlinear signal, characteristic spectral line splittings are restricted to short delays. When considering a three-pulse excitation the line splittings, induced by the local field effect, persist for long delays. All of the found features are instructively explained within the Bloch vector picture and we show how the exciton occupation dynamics govern the different four-wave mixing signals.
AN EXCITONIC APPROACH TO THE ULTRAFAST OPTICAL RESPONSE OF SEMICONDUCTOR NANO-STRUCTURES

Dawei Wang

2008-01-01

Abstract:Thesis (Ph.D, Physics, Engineering Physics and Astronomy) -- Queen's University, 2008-12-01 18:21:17.181
Optoelectronic device simulations based on macroscopic Maxwell-Bloch equations

Christian Jirauschek,Michael Riesch,Petar Tzenov

DOI: https://doi.org/10.1002/adts.201900018

2020-06-09

Abstract:Due to their intuitiveness, flexibility and relative numerical efficiency, the macroscopic Maxwell-Bloch (MB) equations are a widely used semiclassical and semi-phenomenological model to describe optical propagation and coherent light-matter interaction in media consisting of discrete-level quantum systems. This review focuses on the application of this model to advanced optoelectronic devices, such as quantum cascade and quantum dot lasers. The Bloch equations are here treated as a density matrix model for driven quantum systems with two or multiple discrete energy levels, where dissipation is included by Lindblad terms. Furthermore, the one-dimensional MB equations for semiconductor waveguide structures and optical fibers are rigorously derived. Special analytical solutions and suitable numerical methods are presented. Due to the importance of the MB equations in computational electrodynamics, an emphasis is placed on the comparison of different numerical schemes, both with and without the rotating wave approximation. The implementation of additional effects which can become relevant in semiconductor structures, such as spatial hole burning, inhomogeneous broadening and local-field corrections, is discussed. Finally, links to microscopic models and suitable extensions of the Lindblad formalism are briefly addressed.

Mesoscale and Nanoscale Physics
Carrier Density Oscillation in photoexcited Semiconductors

Ebrahim Najafi,Amir Jafari,Bolin Liao,Ahmed Zewail

DOI: https://doi.org/10.48550/arXiv.1909.06338

2019-09-14

Abstract:The perturbation of a semiconductor from the thermodynamic equilibrium often leads to the display of nonlinear dynamics and formation of spatiotemporal patterns due to the spontaneous generation of competing processes. Here, we describe the ultrafast imaging of nonlinear carrier transport in silicon, excited by an intense femtosecond laser pulse. We use scanning ultrafast electron microscopy (SUEM) to show that, at a sufficiently high excitation fluence, the transport of photoexcited carriers slows down by turning into an oscillatory process. We attribute this nonlinear response to the electric field, generated by the spatial separation of these carriers under intrinsic and photo-induced fields; we then provide an advection-diffusion model that mimics the experimental observation. Our finding provides a direct imaging evidence for the electrostatic oscillation of hot carriers in highly excited semiconductors and offers new insights into their spatiotemporal evolution as the equilibrium is recovered.

Materials Science,Applied Physics
Theory of highly excited semiconductor nanostructures including Auger coupling: exciton-bi-exciton mixing in CdSe nanocrystals

Marek Korkusinski,Oleksandr Voznyy,Pawel Hawrylak

DOI: https://doi.org/10.1103/PhysRevB.84.155327

2011-10-01

Abstract:We present a theory of highly excited interacting carriers confined in a semiconductor nanostructure, incorporating Auger coupling between excited states with different number of excitations. The Coulomb matrix elements connecting exciton, bi-exciton and tri-exciton complexes are derived and an intuitive picture of breaking neutral multi-exction complexes into positively and negatively charged multi-exciton complexes is given. The general approach is illustrated by analyzing the coupling of biexciton and exciton in CdSe spherical nanocrystals. The electron and hole states are computed using atomistic $sp^3d^5s^*$ tight binding Hamiltonian including an effective crystal field splitting and surface passivation. For each number of electron-hole pairs the many-body spectrum is computed in the configuration-interaction approach. The low-energy correlated biexciton levels are broken into charged complexes: a hole and a negatively charged trion and an electron and a positively charged trion. Out of a highly excited exciton spectrum a subspace coupled to bi-exciton levels via Auger processes is identified. The interaction between correlated bi-exciton and exciton states is treated using exact diagonalization techniques. This allows to extract the spectral function of the biexciton and relate its characteristic width and amplitude to the characteristic amplitude and timescale of the coherent time evolution of the coupled system. It is shown that this process can be described by the Fermi's Golden Rule only if a fast relaxation of the excitonic subsystem is accounted for.

Mesoscale and Nanoscale Physics,Materials Science
Auger Recombination and Carrier-Lattice Thermalization in Semiconductor Quantum Dots under Intense Excitation

Luye Yue,Jingjun Li,Yingpeng Qi,Jie Chen,Xuan Wang,Jianming Cao

DOI: https://doi.org/10.1021/acs.nanolett.2c04804

IF: 10.8

2023-03-29

Nano Letters

Abstract:A thorough understanding of the photocarrier relaxation dynamics in semiconductor quantum dots (QDs) is essential to optimize their device performance. However, resolving hot carrier kinetics under high excitation conditions with multiple excitons per dot is challenging because it convolutes several ultrafast processes, including Auger recombination, carrier-phonon scattering, and phonon thermalization. Here, we report a systematic study of the lattice dynamics induced by intense photoexcitation...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Two-Dimensional Exciton Oriented Diffusion via Periodic Potentials

Yuchen Dai,Guangyi Tao,Yuxiang Chen,Guangjie Yao,Donglin Liu,Zhibo Dang,Zhengchang Liu,Pu Peng,Yijing Huang,Xiao He,Han Zhang,Zhipeng Zheng,Haonan Sun,Wenqi Qian,Pengfei Qi,Yongji Gong,Yan Guan,Kaihui Liu,Zheyu Fang

DOI: https://doi.org/10.1021/acsnano.4c05723

IF: 17.1

2024-08-27

ACS Nano

Abstract:Excitonic devices operate based on excitons, which can be excited by photons as well as emitting photons and serve as a medium for photon-carrier conversion. Excitonic devices are expected to combine the advantages of both the high response rate of photonic devices and the high integration of electronic devices simultaneously. However, because of the neutral feature, exciton transport is generally achieved via diffusion rather than using electric fields, and the efficient control of exciton flux directionality has always been difficult. In this work, a precisely designed one-dimensional periodic nanostructure (1DPS) is used to introduce periodic strain field along with resonant mode to the WS2 monolayer, achieving exciton oriented diffusion with a 7.6-fold exciton diffusion coefficient enhancement relative to that of intrinsic, while enhancing the excitonic emission intensity by a factor of 10 and reducing exciton saturation threshold power by 2 orders of magnitude. Based on the analysis of the density functional theory (DFT) and the finite-element method (FEM), we attribute the anisotropy of exciton diffusion to exciton funneling induced by periodic potentials, which do not require excessive potential height difference for an efficient oriented diffusion. As a result of resonant emission, the exciton diffusion is dragged into the nonlinear regime owing to the high exciton density close to saturation, which improves the exciton diffusion coefficient and diffusion anisotropy more appreciably.
Optical Bloch Equations Modified with Phonon-Induced Intensity-Dependent Dephasing

Zhou Guang-Hua,Li Yao-Yi,Cheng Mu-Tian,Liu Shao-Ding,Wang Qu-Quan

DOI: https://doi.org/10.1088/0253-6102/48/2/026

2007-01-01

Abstract:We extend the exciton population equations of a two-level quantum dot system with weak excitation to the ones with strong excitations, in which, the phonon-induced intensity-dependent dephasing time and decay rate are involved. The straightforward calculated populations from the modified population equations demonstrate the damping behavior of Rabi oscillation as the external field increasing. The effect of the intensity-dependent dephasing time and the intensity-dependent decay rate are also discussed.
Excitonic Bloch equations from first principles

Gianluca Stefanucci,Enrico Perfetto

2024-07-24

Abstract:The ultrafast conversion of coherent excitons into incoherent excitons, as well as the subsequent exciton diffusion and thermalization, are central topics in current scientific research due to their relevance in optoelectronics, photovoltaics and photocatalysis. Current approaches to the exciton dynamics rely on {\em model} Hamiltonians that depend on already screened electron-electron and electron-phonon couplings. In this work, we subject the state-of-the-art methods to scrutiny using the {\em ab initio} Hamiltonian for electrons and phonons. We offer a rigorous and intuitive proof demonstrating that the exciton dynamics governed by model Hamiltonians is affected by an overscreening of the electron-phonon interaction. The introduction of an auxiliary exciton species, termed the irreducible exciton, enables us to formulate a theory free from overscreening and derive the excitonic Bloch equations. These equations describe the time-evolution of coherent, irreducible, and incoherent excitons during and after the optical excitation. They are applicable beyond the linear regime, and predict that the total number of excitons is preserved when the external fields are switched off.

Materials Science,Mesoscale and Nanoscale Physics
Excitonic effects in nonlinear optical responses: Exciton-state formalism and first-principles calculations

Jiawei Ruan,Y.-H. Chan,Steven G. Louie

2023-11-11

Abstract:Nonlinear optical (NLO) responses have garnered tremendous interest for decades due to their fundamental and technological interests. The theory and calculations of NLO responses including electron-hole interactions, which is especially crucial for reduced-dimensional materials, however, remain underdeveloped. Here, we develop an ab initio approach to calculate second-order nonlinear responses (such as second harmonic generation (SHG) and shift current) with excitonic effects in an exciton-state basis, going beyond the independent-particle approximation. We compute SHG in monolayer h-BN and MoS2 employing exciton states from GW-Bethe-Salpeter equation (GW-BSE) calculations and show both materials exhibit huge excitonic enhancement. The physical origin of the enhancement is directly understood through the coupling amplitudes among exciton states, assisted with diagrammatic representations. Our method provides an accurate and ab initio description of second-order NLO responses, capturing self-energy and electron-hole interaction effects.

Materials Science,Mesoscale and Nanoscale Physics,Strongly Correlated Electrons

Excitonic and Semiconductor Bloch Equation Approaches to Carrier Dvnamics in Semiconductors

Excitonic Approach to the Ultrafast Optical Response of Semiconductors

An Excitonic Approach to the Intraband THz Response of Semiconductor Nanostructures

Computational Modeling Of Optical Response From Excitons In A Nano Optical Medium

Many-body effects on excitonic optical properties of photoexcited semiconductor quantum wire structures

A Hybrid Method for Integrated Atomistic-Continuum Simulation of Ultrashort-Pulsed Laser Interaction with Semiconductors

Transient Superdiffusion of Energetic Carriers in Transition Metal Dichalcogenides Visualized by Ultrafast Pump-Probe Microscopy

Ultrafast Carrier Dynamics Of Bi2o2se Nanoplates In The Nonlinear Excitation Regime

Carrier diffusion in semiconductor nanoscale resonators

Diagrammatic approach to excitonic effects on nonlinear optical response

Diffusion of Excitons in a Two-Dimensional Fermi Sea of Free Charges

Influence of local fields on the dynamics of four-wave mixing signals from 2D semiconductor systems

AN EXCITONIC APPROACH TO THE ULTRAFAST OPTICAL RESPONSE OF SEMICONDUCTOR NANO-STRUCTURES

Optoelectronic device simulations based on macroscopic Maxwell-Bloch equations

Carrier Density Oscillation in photoexcited Semiconductors

Theory of highly excited semiconductor nanostructures including Auger coupling: exciton-bi-exciton mixing in CdSe nanocrystals

Auger Recombination and Carrier-Lattice Thermalization in Semiconductor Quantum Dots under Intense Excitation

Two-Dimensional Exciton Oriented Diffusion via Periodic Potentials

Optical Bloch Equations Modified with Phonon-Induced Intensity-Dependent Dephasing

Excitonic Bloch equations from first principles

Excitonic effects in nonlinear optical responses: Exciton-state formalism and first-principles calculations