High Efficiency Pert Cells On N-Type Silicon Substrates

Jh Zhao,Ah Wang,Pp Altermatt,Ma Green,Jp Rakotoniaina,O Breitenstein

DOI: https://doi.org/10.1109/PVSC.2002.1190495

2002-01-01

Abstract:High minority carrier lifetimes of a few milliseconds have been demonstrated both on CZ and FZ n-type silicon substrates. It is particularly interesting that the phosphorus doped n-type CZ wafers give minority carrier lifetimes nearly as high as those from the best p-type FZ silicon materials. This gives a good potential for very high performance on n-type CZ substrates.21.1% and 21.9% efficiencies are reported for PERT (passivated emitter, rear totally-diffused) cells fabricated on these n-type mono-crystalline CZ and FZ silicon substrates, respectively. High open-circuit voltages approaching 700 mV have been demonstrated by these cells. Unfortunately, a non-uniform emitter saturation current has caused low fill factors for these cells, which will be investigated in future research.