Abstract:When the traditional planar metal-oxide-semiconductor-field-effect transistors (MOSFETs) encounter insurmountable bottleneck of static power dissipation, junctionless transistor (JLT) becomes a promising candidate for sub-22 nm nanoscale devices due to its simpler fabrication process and better short-channel performances. Subthreshold behaviors dominate the standby power of nanoscale JLTs. In this chapter, a physics-based analytical model of electrostatic potential for both silicon and germanium short-channel junctionless cylindrical surrounding-gate (JLCSG) MOSFETs operated in the subthreshold regime is proposed, in which the full two-dimensional (2D) Poisson's equation is solved in the channel region by a method of series expansion. The expression of the proposed electrostatic potential is completely rigorous and explicit. Based on this result, the expressions of threshold voltage, subthreshold drain current, and subthreshold swing for JLCSG MOSFETs are derived. Subthreshold behaviors are studied in detail by changing different device parameters and bias conditions, including doping concentration, channel radius, gate length, gate equivalent oxide layer thickness, drain voltage, and gate voltage. Results predicted by all the analytical models agree well with numerical solutions from the three-dimensional simulator. These analytical models can be used to investigate the operating mechanisms of nanoscale JLCSG MOSFETs and to optimize their device performances.

A new analytical model for junctionless cylindrical surrounding-gate MOSFETs

Analytical Short-Channel Behavior Models of Junctionless Cylindrical Surrounding-Gate Mosfets

Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

A Study of Subthreshold Behavior of Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs from an Electrostatic Potential Viewpoint

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

A rigorous analytical model for short-channel junctionless double-gate MOSFETs

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs

Accurate 2-D analytical model for cylindrical gate-junctionless ferroelectric-nanowire (CG-JFe-NW) MOSFET with scaled channel length.

3-D Analytical Model for Short-Channel Triple-Gate Junctionless MOSFETs

Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors

A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs from Intrinsic Channel to Heavily Doped Body

A charge-based compact model for arbitrary doped cylindrical surrounding-gate MOSFETs

A carrier-based analytic model for undoped surrounding-gate MOSFETs

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

A Novel Approach to Model Threshold Voltage and Subthreshold Current of Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

A Compact Model of Subthreshold Current with Source/Drain Depletion Effect for the Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs

A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs

Analytical Drain Current Model for Long-Channel Gate-All-around Negative Capacitance Transistors with a Metal–ferroelectric–insulator–semiconductor Structure