Gate-dependent Pseudospin Mixing in Graphene/boron Nitride Moiré Superlattices
Zhiwen Shi,Chenhao Jin,Wei Yang,Long Ju,Jason Horng,Xiaobo Lu,Hans A. Bechtel,Michael C. Martin,Deyi Fu,Junqiao Wu,Kenji Watanabe,Takashi Taniguchi,Yuanbo Zhang,Xuedong Bai,Enge Wang,Guangyu Zhang,Feng Wang
DOI: https://doi.org/10.1038/nphys3075
IF: 19.684
2014-01-01
Nature Physics
Abstract:Electrons in graphene have a pseudospin, but controlling this degree of freedom is challenging. Evidence now suggests that the moiré superlattices arising in two-dimensional heterostructures can be used to electrically manipulate pseudospins. Electrons in graphene are described by relativistic Dirac–Weyl spinors with a two-component pseudospin1,2,3,4,5,6,7,8,9,10,11,12. The unique pseudospin structure of Dirac electrons leads to emerging phenomena such as the massless Dirac cone2, anomalous quantum Hall effect2,3, and Klein tunnelling4,5 in graphene. The capability to manipulate electron pseudospin is highly desirable for novel graphene electronics, and it requires precise control to differentiate the two graphene sublattices at the atomic level. Graphene/boron nitride moiré superlattices, where a fast sublattice oscillation due to boron and nitrogen atoms is superimposed on the slow moiré period, provides an attractive approach to engineer the electron pseudospin in graphene13,14,15,16,17,18. This unusual moiré superlattice leads to a spinor potential with unusual hybridization of electron pseudospins, which can be probed directly through infrared spectroscopy because optical transitions are very sensitive to excited state wavefunctions. Here, we perform micro-infrared spectroscopy on a graphene/boron nitride heterostructure and demonstrate that the moiré superlattice potential is dominated by a pseudospin-mixing component analogous to a spatially varying pseudomagnetic field. In addition, we show that the spinor potential depends sensitively on the gate-induced carrier concentration in graphene, indicating a strong renormalization of the spinor potential from electron–electron interactions.