Abstract:The proposed bandgap voltage reference (BGR) realizes the second‐order temperature compensation by adding a sum current branch and a differential current branch to the conventional low‐voltage first‐order temperature‐compensated current‐mode BGR structure. The sum‐current branch is composed of two metal‐oxide‐semiconductor (MOS) transistors, and the difference‐current branch consists of four MOS transistors, respectively. This simple low‐voltage second‐order temperature‐compensated structure achieves lower temperature coefficient (TC) than the conventional first‐order temperature‐compensated current‐mode BGR. Summary A current‐mode (CM) bandgap voltage reference (BGR) with second‐order curvature compensation is presented in this paper. The proposed CM BGR offers a simple compensation structure that requires only six additional transistors compared with traditional BGR designs, making it an attractive solution for low temperature coefficient (TC) voltage references. Proportional to absolute temperature (PTAT) current digital‐to‐analog converters (DACs) are used to suppress the effect of process variation and device mismatch on TC. The compensation signal is generated using the voltage difference of two bipolar junction transistor (BJT) emitter–bases whose currents are the sum and difference of the PTAT current and the zero to absolute temperature (ZTAT) current, respectively. The proposed CM BGR is designed with 0.18‐μm BIPOLAR CMOS DMOS process. A TC is 2.41 ppm/°C over a wide temperature range of −40°C to 150°C. The linear sensitivity of the supply voltage from 1.2 to 2 V is 0.027%/V. With an active area of 0.0721 mm2, it consumes 68 μA at room temperature. The integrated output noise from 0.1 to 10 Hz is 21.9 μV.

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