Half-DRAM: A High-Bandwidth and Low-Power DRAM Architecture from the Rethinking of Fine-Grained Activation

Tao Zhang,Ke Chen,Cong Xu,Guangyu Sun,Tao Wang,Yuan Xie
DOI: https://doi.org/10.1109/isca.2014.6853217
2014-01-01
Abstract:DRAM memory is a major contributor for the total power consumption in modern computing systems. Consequently, power reduction for DRAM memory is critical to improve system-level power efficiency. Fine-grained DRAM architecture [1, 2] has been proposed to reduce the activation/ precharge power. However, those prior work either incurs significant performance degradation or introduces large area overhead. In this paper, we propose a novel memory architecture Half-DRAM, in which the DRAM array is reorganized to enable only half of a row being activated. The half-row activation can effectively reduce activation power and meanwhile sustain the full bandwidth one bank can provide. In addition, the half-row activation in Half-DRAM relaxes the power constraint in DRAM, and opens up opportunities for further performance gain. Furthermore, two half-row accesses can be issued in parallel by integrating the sub-array level parallelism to improve the memory level parallelism. The experimental results show that Half-DRAM can achieve both significant performance improvement and power reduction, with negligible design overhead
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