Abstract:The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant charged defects is determining a consistent position of the corresponding defect levels, which is difficult to derive using standard supercell calculations. In a complementary approach, we take advantage of the embedded cluster methodology that provides direct access to a common zero of the electrostatic potential for all point defects in all charge states. Charged defects polarise a host dielectric material with long-range forces that strongly affect the outcome of defect simulations; to account for the polarisation we couple embedding with the hybrid quantum mechanical/molecular mechanical (QM/MM) approach and investigate the structure, formation and ionisation energies, and equilibrium concentrations of native point defects in wurtzite GaN at a chemically accurate hybrid-density-functional-theory level. N vacancies are the most thermodynamically favourable native defects in GaN, which contribute to the n-type character of as-grown GaN but are not the main source, a result that is consistent with experiment. Our calculations show no native point defects can form thermodynamically stable acceptor states. GaN can be easily doped n-type, but, in equilibrium conditions at moderate temperatures acceptor dopants will be compensated by N vacancies and no significant hole concentrations will be observed, indicating non-equilibrium processes must dominate in p-type GaN. We identify spectroscopic signatures of native defects in the infrared, visible and ultraviolet luminescence ranges and complementary spectroscopies. Crucially, we calculate the effective-mass-like-state levels associated with electrons and holes bound in diffuse orbitals...

Origin of Ga vacancy-related YL center in n -type GaN: A first-principles study

Different Origins of the Yellow Luminescence in As-Grown High-Resistance GaN and Unintentional-Doped GaN Films

Influence of Point Defects on Optical Properties of GaN-based Materials by First Principle Study

Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect

The GaN yellow-luminescence-related surface state and its interaction with air

Large Negative Thermal Quenching and Broadening Lineshape Analysis of Acceptor-Associated Yellow Luminescence in Si-Doped GaN

Mechanism of yellow luminescence in GaN at room temperature

Nature and Elimination of Yellow-Band Luminescence and Donor–acceptor Emission of Undoped GaN

Photoluminescence from Vacancy‐containing Defects in GaN

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

First-principles Study of CN Point Defects on Sidewall Surface of [0 0 0 1]-Oriented GaN Nanowires

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Large Negative Thermal Quenching of Yellow Luminescence in Non-Polar InGaN/GaN Quantum Wells

C and Si Ion Implantation and the Origins of Yellow Luminescence in Gan

Observation of Optically-Active Metastable Defects in Undoped Gan Epilayers

GaN as a Material Platform for Single‐Photon Emitters: Insights from Ab Initio Study

Donor and Acceptor Characteristics of Native Point Defects in GaN

First-principle Calculation for Luminescent-Effects of Si and Zn Impurities in GaN

Optoelectronic properties exploration of native point defects on GaN nanowires

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Optical Dipole Structure and Orientation of GaN Defect Single-Photon Emitters