Abstract:Recent theory predicted that the quantum spin Hall effect, a fundamentally new quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We fabricated such sample structures with low density and high mobility in which we could tune, through an external gate voltage, the carrier conduction from n-type to p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nanometers, the insulating regime showed the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells ( d > 6.3 nanometers), the nominally insulating regime showed a plateau of residual conductance close to 2 e 2 / h , where e is the electron charge and h is Planck's constant. The residual conductance was independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance was destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d = 6.3 nanometers, was also independently determined from the magnetic field–induced insulator-to-metal transition. These observations provide experimental evidence of the quantum spin Hall effect.

Helical Quantum States in HgTe Quantum Dots with Inverted Band Structures

Exotic Quantum States in HgTe Quantum Dots with Inverted Band Structures

Single- and Few-Electron States in Deformed Topological Insulator Quantum Dots

New Topological States in HgTe Quantum Wells from Defect Patterning

Spin polarized Charge Trapping and Transfer at a HgTe Topological Insulator Quantum Dot

Spin Quantum Beats of Bright and Dark Excitonic States in Neutral Inas Quantum Dots

Spin transport in quantum dot embedded in Aharonov–Bohm ring

Effect of Magnetic Field on Electron Transport in HgTe/CdTe Quantum Wells: Numerical Analysis

Quantum Spin Hall Insulator State in HgTe Quantum Wells

Optical Transitions Inpbte∕cdtequantum Dots

Spin-Polarized Edge Modes and Snake States in Hgte/Cdte Quantum Wells under an Antisymmetric Magnetic Field

Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells.

Valence Holes As Luttinger Spinor Based Qubits in Quantum Dots

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

Spin States in Semiconductor Quantum Dot with A Single Magnetic Ion

Spin-Polarized Charge Trapping Cell Based on A Topological Insulator Quantum Dot

Quantum Hall effect and current distribution in the 3D topological insulator HgTe

Quantum Spin Hall Effect in Inverted InAs/GaSb Quantum Wells

Stable quantum dots in an InSb two-dimensional electron gas

Electronic Band Structures and Electron Spins of InAs/GaAs Quantum Dots Induced by Wetting-Layer Fluctuation