Theoretical Analysis on Gain Characteristics of Silicon Raman Amplifiers

Liu Zu-Xue,Feng Ming,Guo Qing-Hua,Qiao Li,Lue Ke-Cheng
DOI: https://doi.org/10.7498/aps.60.014214
IF: 0.906
2011-01-01
Acta Physica Sinica
Abstract:We report the new theoretical analysis method to obtain net gain in silicon waveguide by stimulated Raman scattering, and the key parameters of the free carrier lifetime and the pump light intensity are analyzed. The free carrier lifetime threshold and pump light intensity threshold are deduced. The gain characteristics of silicon Raman amplifiers with different pumping schemes are investigated, and the results show that the gain can be significantly enhanced in the bidirectional pump scheme.
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