In-plane and Tunneling Pressure Sensors Based on Graphene/hexagonal Boron Nitride Heterostructures

Yang Xu,Zhendong Guo,Huabin Chen,You Yuan,Jiechao Lou,Xiao Lin,Haiyuan Gao,Hongsheng Chen,Bin Yu
DOI: https://doi.org/10.1063/1.3643899
IF: 4
2011-01-01
Applied Physics Letters
Abstract:An in-plane pressure sensor (IPPS) consisting of graphene sandwiched by hexagonal boron nitride (h-BN) and a tunnelingpressure sensor (TPS) consisting of h-BN sandwiched by graphene are demonstrated. The responses as function of external pressure are modeled. The current varies by 3 orders of magnitude as pressure increases from 0 to 5 nN/nm2. The IPPS current is negatively correlated to pressure, whereas TPS current exhibits positive correlation to pressure. The IPPS design is insensitive to the number of wrapping h-BN layers, indicating precise process control is unnecessary. The result paves a viable avenue towards realizing of atomic scale pressure sensors.
What problem does this paper attempt to address?