Studies on Mutation Breeding of High-Yielding Ganoderma Lucidum Strains by Low Energy N+Ion Beam Implantation

李颖颖,谢瑀婷,全卫丰,刘广建,汪洁,李泰明,曹荣月,郑惠华,刘景晶
DOI: https://doi.org/10.19526/j.cnki.1005-8915.2011.01.007
2011-01-01
Abstract:Low energy N+ ion beam implantation was used in the breeding of Ganoderma lucidum in our research. The optimum operation condition and some controlling parameters of the implantation using fresh spores can be determined as follows: the implantation dose is 1. 25×1016 ions·cm-2, the energy is 20KeV, the vaccum is 10-3 Pa, and a 5-second pluse with a 15-second internal. The mutation strains were determined by EST isoenzyme analysis together with the antagonistic experiment. Superior strains were selected according to the polysacchrides rate of liquid fermentation and biological efficiency of solid culturavation. After the hereditary stability experiment, a high yielding strain was got. The study indicated the practicality of the ion beam implantation method in the breeding of Ganoderma lucidum.
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