Novel hot-carrier degradation mechanisms in the lateral insulated-gate bipolar transistor on SOI substrate

Qinsong Qian,Weifeng Sun,Siyang Liu,Jing Zhu

DOI: https://doi.org/10.1109/TED.2011.2105494

IF: 3.1

2011-01-01

IEEE Transactions on Electron Devices

Abstract:The different hot-carrier degradation mechanisms of the lateral insulated-gate bipolar transistor on a silicon-on-insulator substrate (SOI-LIGBT) for different stress conditions have been experimentally investigated for the first time. For low Vgs and high Vds, the hot hole injects and traps into the accumulation and the field oxide, particularly the bird's beak, which results in the decrease in t...