Diamond electromagnetic band gap structure based on Bi(Nb 0.992 V 0.008 )O 4 ceramic

Wei Dai,Hong Wang,Minjie Wang,Zhiyuan Shen,Dichen Li,Di Zhou
DOI: https://doi.org/10.1007/s10854-010-0153-4
2010-01-01
Abstract:Three-dimensional (3D) diamond structure electromagnetic band gap (EBG) structures containing high-K Bi(Nb 0.992 V 0.008 )O 4 (BVN) ceramic, fabricated by rapid-prototyping (RP) and gel casting methods, were investigated. The simulations based on finite element method (FEM) were employed to model the band structures. High-K Bi(Nb 0.992 V 0.008 )O 4 ceramic was made into gel to cast into the diamond structure molds fabricated by rapid-prototyping method. Then the green bodies were sintered at 900 °C to obtain well densified EBG samples. The transmission characteristics of the EBG structures were measured by transmission/reflection (T/R) methods using a vector network analyzer. Wide complete band gap was observed in the transmission characteristics from 10.08 to 12.59 GHz and it agreed well with the simulation results, which was from 10 to 12.19 GHz.
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