New Bridge Snubber for Suppressing Reverse Recovery Effects of CoolMOS™
Ben Guo,Siqi Li,Xiaohua Jiang,Kanie, T.
DOI: https://doi.org/10.1109/icems.2011.6073554
2011-01-01
Abstract:Severe reverse recovery effects of the intrinsic diode is a big problem in the application of CoolMOS™, resulting surge voltage and current, extra switching loss and electro magnetic interference (EMI). A new bridge snubber with energy recovery is presented in this paper for suppressing reverse recovery effects in CoolMOS™ inverters. It includes both turn-on and turn-off snubber cells and can return the absorbed energy to the load. It is verified through simulation and experiment that the proposed snubber can significantly reduce surge current during switching and raise the efficiency.
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