Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Impact of Pb doping on the optical and electrical properties of ZnO nanowires.

Effect of Pb-doping on the morphology, structural and optical properties of ZnO nanowires synthesized via modified thermal evaporation

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Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Zn-doped SnO2 Nanoparticles: Structural, Optical, Dielectric and Magnetic Properties

Phosphorus Doped Zn1-xMgxO Nanowire Arrays

Conductivity Enhancement by Slight Indium Doping in ZnO Nanowires for Optoelectronic Applications

Charged States and Band-Gap Narrowing in Codoped ZnO Nanowires for Enhanced Photoelectrochemical Responses

Effects of Al doping on the optical and electrical properties of pre-synthesized ZnO powders by solid state method

Effect of Pb doping onto physical properties of ZnO thin films deposited by AACVD

Interfacially Al-doped ZnO Nanowires: Greatly Enhanced Near Band Edge Emission Through Suppressed Electron-Phonon Coupling and Confined Optical Field.

Enhanced Optoelectronic Performance From The Ti-Doped Zno Nanowires

Electrical properties of Cu doped p-ZnTe nanowires

Enhanced Photoluminescence and Field-Emission Behavior of Vertically Well Aligned Arrays of In-Doped Zno Nanowires

Optical properties and carrier dynamics in Co-doped ZnO nanorods

Origin of p-Type Doping in Zinc Oxide Nanowires Induced by Phosphorus Doping: A First Principles Study

Single-Crystalline Pb Nanowires Grown by Galvanic Displacement Reactions of Pb Ions on Zinc Foils and Their Superconducting Properties

Effects of N Implantation on Defect Formation in ZnO Nanowires

Impact of Nd Doping on Electronic, Optical, and Magnetic Properties of ZnO: A GGA + U Study

Effect of copper and silver co-doping on growth behaviour and photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes

Blue-green and Red Luminescence from Non-Polar ZnO:Pb Films