Abstract:The photoluminescence (PL) and photoluminescence excitation spectra (PLE) of selected InxGa1-xN samples grown by metal organic chemical vapor deposition (MOCVD) have been investigated, and the analysis of structural and optical behaviors has been taken to study the existence of the microstructure InGaN alloys on the basis of X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements.XRD reveals that the sample is a single crystalline InxGa1-xN film formed predominantly in (0002) direction, the In mole composition x in InxGa1-xN film is calculated to be about 0.2 according to the Bragg's angle of InxGa1-xN (0002). The AFM plane-view and 3D images of the selected In0.2Ga0.8N sample show almost uniform island-like microstructure appearing to be composed of granular-crystalline in nanometer scale. The islands composed of the grapes-like have an average height of 10 nm at most and a mean size of 300 nm. The self-organized microstructure appeared to form cone and/or pyramid shape and tended to agglomerate island-like surface with RMS roughness about 10 nm, which attributed to Stranski-Krastanov growth mechanism. The comparison between PLE and PL under different exciting or monitoring energy allows determining the existence of wetting layer (WL)in the sample. The PLE and PL measurements show that the resonant absorption is related to the band gap and wetting layer of the alloy at different exciting and monitoring energy. It has been found that PLE peaks of the In0.2Ga0.8N alloy are dominated by 365 nm and 474 nm with monitoring wavelength 545 nm and 493 nm; the broad 545 nm and narrow 493 nm emission peaks are originated from In(Ga)N wetting layer and InGaN region respectively. The structural and optical analyses suggest that the origin of the exciton localization center is the self-formed islands. Hence, the irrelevancy of the PL spectra to the gap energy was explained in terms of fluctuation resulting from variations in grain size or shape. This type of localized center provides another physical model for the proposed localized states in InxGa1-xN epilayers. Further characterization of the InGaN systems is underway to help fully understand the correlation between the structural and the optical pro-perties of self-organized micro-structure of InGaN system.

Optical Properties of InN Rods on Sapphire Grown by Metal–organic Chemical Vapor Deposition

Optical Properties of InN Films Grown by MOCVD

Effects of Growth Temperature on the Optical Properties of InN Nanostructures Grown by MOCVD

Unusual Properties of the Fundamental Band Gap of InN

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate

Study on the Photoluminescence Properties of Inn Films

Optical Properties and Electronic Structure of Inn and In-Rich Group Iii-Nitride Alloys

Influence of GaN Buffer Layer for InN Growth

Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns

The Growth Temperatures Dependence of Optical and Electrical Properties of Inn Films

Optical Constants of InN Thin Films on (111) GaAs Grown by Reactive Magnetron Sputtering

Photoluminescence of N‐inn with Low Electron Concentrations

Optical Properties and Bonding Behaviors of InSbN Alloys Grown by Metal-Organic Chemical Vapor Deposition

Temperature Effects on Optical Properties of InN Thin Films

Depth Dependence of Structural Quality in InN Grown by Metalorganic Chemical Vapor Deposition

Acceptor States in the Photoluminescence Spectra of N-Inn

Growth and Characterization of Inn Thin Films on Sapphire by Mocvd

Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE

Investigation on Optical and Micro-structural Properties of Inx Ga1-x N Alloys Grown by MOCVD

Optical Properties of AlInN Thin Films

20 Mev-Deep Donor Level in Inn Film of 0.76 Ev Band Gap Grown by Plasma-Assisted Nitrogen Source