Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction
Wenjing Zhang,Guoqiang Hao,Rui Zhang,Jiahui Xu,Xiaojun Ye,Hongbo Li
DOI: https://doi.org/10.1016/j.jpcs.2021.110189
IF: 4.383
2021-10-01
Journal of Physics and Chemistry of Solids
Abstract:<p>Fabricating a low Schottky barrier is still a great challenge in electrical transport behavior of nano field effect transistors (FETs). To settle this problem, the electronic properties and Schottky contact of the graphene/MoSe<sub>2</sub> heterojunction employing various vertical strains and external electrical fields are investigated with density functional theory (DFT) to obtain low Schottky barrier. Our calculation illustrates that in the graphene/MoSe<sub>2</sub> heterojunction, the intrinsic electronic properties of components are well preserved owing to the weak van der Waals (vdW) mutual interaction between graphene and MoSe<sub>2</sub> monolayer. Furthermore, there is an n-type Schottky contact formed with an n-type Schottky barrier height (SBH) of 0.56 eV at the interface of graphene/MoSe<sub>2</sub> heterojunction. It is worth noting that the type and the height of Schottky barrier are susceptible to the external electrical field or strain employed perpendicularly to the graphene/MoSe<sub>2</sub> heterojunction. And the SBH of the interface can be reduced by tuning the interlayer distance (<em>d</em>) or the electrical field intensity (<em>E</em>). Moreover, Schottky contact transforms from n-type to p-type at <em>d</em> = 3.22 Å or <em>E</em> = +0.08 V/Å. Additionally, the Ohmic contact occurs when the magnitude of positive or negative electrical field is larger than 0.40 V/Å, respectively. Additionally, the heterojunction maintaining high carrier mobility is inferred from the effective masses of electron and hole, namely, 0.074 m<sub>0</sub> and 0.055 m<sub>0</sub>, respectively. Our study may put forward effective strategies to enhance the electronic performance of MoSe<sub>2</sub>-based vdW heterojunction FETs.</p>
physics, condensed matter,chemistry, multidisciplinary