The Evaluation of Interface Quality in HfO2 Films Probed by Time-Dependent Second-Harmonic Generation
Libo Zhang,Li Ye,Weiwei Zhao,Chongji Huang,Xue Liu,Wenshuai Gao,Tao Li,Tai Min,Jinbo Yang,Mingliang Tian,Xuegang Chen
DOI: https://doi.org/10.3390/ma17143471
IF: 3.4
2024-07-14
Materials
Abstract:Time-dependent second-harmonic generation (TD-SHG) is an emerging sensitive and fast method to qualitatively evaluate the interface quality of the oxide/Si heterostructures, which is closely related to the interfacial electric field. Here, the TD-SHG is used to explore the interface quality of atomic layer deposited HfO2 films on Si substrates. The critical SHG parameters, such as the initial SHG signal and characteristic time constant, are compared with the fixed charge density (Qox) and the interface state density (Dit) extracted from the conventional electrical characterization method. It reveals that the initial SHG signal linearly decreases with the increase in Qox, while Dit is linearly correlated to the characteristic time constant. It verifies that the TD-SHG is a sensitive and fast method, as well as simple and noncontact, for evaluating the interface quality of oxide/Si heterostructures, which may facilitate the in-line semiconductor test.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering