Pressure Effects on the Stability of Magnetic Structure of Mn3Zn1−xGexN (X=,0.1)

X. B. Kong,Y. Sun,L. X. Yang,Y. Yu,C. Q. Jin,C. Wang,R. C. Yu
DOI: https://doi.org/10.1063/1.3257258
IF: 2.877
2009-01-01
Journal of Applied Physics
Abstract:This paper reports that the pressure effects on the electronic transport properties of Mn3ZnN and Mn3Zn0.9Ge0.1N were measured under pressures up to 2.4 GPa. Cooling and warming cycles of the temperature-dependent magnetization curves of Mn3ZnN show a hysteresis phenomenon near the transition, implying a first order transition. The cracks which appear in the vicinity of magnetic transition at ambient pressure for Mn3ZnN and at applied pressures not more than 0.3 GPa for Mn3Zn0.9Ge0.1N are restrained under higher pressures. The paramagnetic-antiferromagnetic transition temperature TN decreases almost linearly at the rate of 1.9 and 51 K/GPa for Mn3ZnN and Mn3Zn0.9Ge0.1N respectively, which is explained by the model of TN discussed by Fruchart and the Labbé–Jardin tight-binding approximation model.
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