Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Shape Prediction of Two-Dimensional Adatom Islands on Crystal Surfaces During Homoepitaxial Growth

Theoretical Prediction of the Shape of Two-Dimensional Adatom Islands on Crystal Surface

Morphologies of Epitaxial Islands on a Lattice-Misfitted Substrate

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Edge Reconstruction-Dependent Growth Kinetics of MoS2

Two dimensional graph model for epitaxial crystal growth with adatoms

A Theoretical Study On The Growth Of Low-Dimensional Nanocrystals On Isotropic Substrates

Reaction Limited Aggregation with Anisotropic Island-Edge Exchange in Surfactant-mediated Epitaxy

A New Model to Predict Optimum Conditions for Growth of 2D Materials on a Substrate.

One-dimensional Crystal Growth Model on a Square Lattice Substrate

The epitaxy of 2D materials growth

Predicting nanocrystal morphology governed by interfacial strain

From Initial to Late Stages of Epitaxial Thin Film Growth: Stm Analysis and Atomistic or Coarse-Grained Modeling

Predicting the growth of two-dimensional nanostructures

A machine learning potential-based generative algorithm for on-lattice crystal structure prediction

Surface properties of epitaxially grown crystals

Predicting crystal growth via a unified kinetic three-dimensional partition model

Doping Influence on the Ability to Form Single Crystals

Anisotropy Effect on Heteroepitaxial Growth of Self-Assembled Islands

A Low-Dimensional Crystal Growth Model on an Isotropic and Quasi-Free Sustained Substrate*

Evolutionary algorithm for prediction of the atomic structure of two-dimensional materials on substrates