Abstract:Rapid thermal annealing was performed on Cu(In,Ga)Se2(CIGS) films and solar cells with three content ratios(normal sample,Cu-rich sample,Ga-high sample) under various annealing temperature(110 ℃,150 ℃,180 ℃,2 min holding time) in air ambient.Hall-effect and J-V measurements were carried out on CIGS films and cells before and after Rapid thermal annealing treatments to study effects of Rapid thermal annealing on the CIGS film properties and cell performance.The results show that the Rapid thermal annealing treatment(annealing temperature~150 ℃,holding time~2 min),as the optimal annealing condition,can provide improvements in cell performance and diode characteristics,which improves furthest the fill factor FF of Ga-high cell and the open circuit voltage Voc of Cu-rich cell via reducing the defect densities of Ga-high cell and passivation for Cu2-xSe compounds of Cu-rich cell.

Rapid Thermal Annealing on Cu(In,Ga)Se2 Films and Solar Cells with Different Content Ratios