Abstract:Field‐free switching is a critical issue for SOT‐MRAM with perpendicular magnetic anisotropic towards application. In this work, z‐direction polarized electrons (σz) produced by the spin Hall effect are utilized to provide the switching direction and σy provides the propulsion of magnetic reorientation. With the cooperation of σy and σz by the spin Hall effect, field‐free switching is achieved. Field‐free switching is a critical issue for spin‐orbit torque‐induced magnetic random‐access memory (SOT‐MRAM) with perpendicular magnetic anisotropic (PMA) towards application. If only the spin‐polarized electrons along the y‐direction (σy) are used, deterministic switching cannot be achieved, as the electron polarization direction and easy magnetization direction are orthogonal. In this work, z‐direction polarized electrons (σz) produced by the spin Hall effect are utilized to provide the switching direction and σy provides the propulsion of magnetic reorientation. With the cooperation of σy and σz by the spin Hall effect, field‐free switching is achieved. To combine with magnetic tunnel junction (MTJ), a model is proposed, in which heavy metals providing σz are deposited on MTJ with asymmetric writing line widths. This model retains the characteristics of read‐write separation and realizes deterministic switching based on SOT.

Dynamic Dipolar Interaction Effect on Spin-Transfer Switching with Perpendicular Anisotropy

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Micromagnetic Study of Fieldlike Spin Torque Effect on the Magnetization Switching in Tunnel Junctions with Perpendicular Anisotropy

Domain Nucleation Mediated Spin-Transfer Switching in Magnetic Nanopillars with Perpendicular Anisotropy

Circular Domain Wall Motion Driven by Spin-Polarized Currents in Confined Square Nanomagnets

Static, Periodic, and Chaotic Magnetization Behavior Induced by Spin-Transfer Torque in Magnetic Nanopillars

Simulation of Electric-Field and Spin-Transfer-Torque Induced Magnetization Switching in Perpendicular Magnetic Tunnel Junctions

Spin-torque-induced switching in a perpendicular GMR nanopillar with a soft core inside the free layer

External-Field-Free Spin Hall Switching of Perpendicular Magnetic Nanopillar with a Dipole-Coupled Composite Structure

Tilted perpendicular anisotropy-induced spin-orbit ratchet effects

Anomalous spin-orbit torque switching due to field-like torque-assisted domain wall reflection

Magnetization-switching dynamics driven by chiral coupling

Signature of Magnetization Dynamics in Spin-Transfer-driven Nanopillars with Tilted Easy Axis

Efficient field-free perpendicular magnetization switching by a magnetic spin Hall effect

Micromagnetic instabilities in spin-transfer switching of perpendicular magnetic tunnel junctions

Current-driven magnetization dynamics and its correlation with magnetization configurations in perpendicularly magnetized tunnel junctions

Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect

Influence Of Dipolar Interaction On Small Magnetic Dot Arrays

Revisiting the Analytical Solution of Spin-Orbit Torque Switched Nanoscale Perpendicular Ferromagnet

Magnetic Interaction Effect on the Critical Switching Current in Vortex Arrays

Spin transfer in nanomagnetic devices with perpendicular anisotropy