Abstract:In order to solve the problem that the quality factor (Q factor) of the conventional defected ground structure (DGS) is not high and cannot produce a sharp resonant band, a novel S-slot DGS is presented. Compared with the conventional DGS, the proposed S-slot DGS has a much higher Q factor, a quite simpler layout and a steeper band rejection. Its equivalent circuit model is extracted by analyzing the transfer characteristics, and design parameters are calculated according to the deducted equations. Characteristics of this type of DGS are investigated with variable dimension parameters and an experiential method for the design of the S-slot DGS is summarized. Finally, a sample of a compact S-slot DGS unit resonated at 4.64 GHz is fabricated. Its Q factor is as high as 39.66 and its size is only 5.00 mm×1.40 mm, with a steep resonant band and a low insertion-loss passband. The measured results show a good agreement with simulation, which demonstrates the applicability of the S-slot DGS in practical engineering.

Novel S-slot DGS with High Quality Factor