An Enhanced Close-in Phase Noise LC-VCO Using Parasitic V-NPN Transistors in a CMOS Process

Gao Peijun,N. J. Oh,Min Hao
DOI: https://doi.org/10.1088/1674-4926/30/8/085004
2009-01-01
Abstract:A differential LC voltage controlled oscillator (VCO) employing parasitic vertical-NPN (V-NPN) transistors as a negative gm-cell is presented to improve the close-in phase noise. The V-NPN transistors have lower flicker noise compared to MOS transistors. DC and AC characteristics of the V-NPN transistors are measured to facilitate the VCO design. The proposed VCO is implemented in a 0.18 μm CMOS RF/mixed signal process, and the measurement results show the close-in phase noise is improved by 3.5–9.1 dB from 100 Hz to 10 kHz offset compared to that of a similar CMOS VCO. The proposed VCO consumes only 0.41 mA from a 1.5 V power supply.
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