Microstructure Changes and Compound Growth Dynamic at Lead-Free/cu Interface under Different Conditions

Lihua Qi,Jihua Huang,Jing Niu,Long Yang,Yaorong Feng,Xingke Zhao,Hua Zhang
DOI: https://doi.org/10.1109/icept.2009.5270590
2009-01-01
Abstract:The atom diffusion and growth behavior of intermetallic compound (IMC) at Sn3.5Ag0.5Cu/Cu interfaces under isothermal aging and thermal-shearing cycling conditions were investigated. The results show that the morphology of Cu6Sn5 IMCs formed at Sn3.5Ag0.5Cu/Cu interface changed gradually from scallop-like to chunk-like, and IMCs thickness developed with the isothermal aging and thermal-shearing cycling times increasing. Furthermore, Cu6Sn5 IMC growth rate under the thermal-shearing cycling condition was higher than that of under isothermal aging. Compared to isothermal aging condition, only one Cu6Sn5 layer was formed and developed at the interface between SnAgCu solder and Cu substrate after 720 cycles. IMC growth dynamic equation is Y = Kepsivradic(Depsiv Cut) + Ketaradic(Deta Cut) with Keta is about 10-5mum2/s under isothermal aging, and that is Y = y0 + Ketaradic(Deta Cut) under the thermal-shearing cycling condition with dynamic parameter Keta = radic(2)(Ceta/epsiv eta - Ceta/beta eta)frac12/(Ceta/beta eta - Cbeta/eta beta)frac12 is about 10-5 to 10-4mum2/s.
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