Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide
Matthew Werner,Cezhou Zhao,Stephen Taylor,Paul R. Chalker,Kate Black,Jeffrey M. Gaskell
DOI: https://doi.org/10.1109/ipfa.2009.5232568
2009-01-01
Abstract:The frequency dispersion of La doped zirconia and cerium doped hafnia films is considered. Doping at concentration of approximately 10% stabilizes crystalline phases with higher-k values. The dielectric relaxation of La doped zirconia films is more severe than the cerium doped hafnia.
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