Nonvolatile and volatile resistive switching characteristics in MoS 2 thin film for RRAM application
Xiaoyi Lei,Xiaoya Zhu,Hao Wang,Yang Dai,Han Zhang,Chunxue Zhai,Shulong Wang,Junfeng Yan,Wu Zhao
DOI: https://doi.org/10.1016/j.jallcom.2023.172443
IF: 6.2
2023-10-12
Journal of Alloys and Compounds
Abstract:Resistive random access memory (RRAM) is one of strong candidates for future memory technology. The volatile and nonvolatile properties of devices are important foundations for the construction of neuromorphic hardware systems, which still represents a challenge. In this study, we fabricated the Cu/MoS 2 /ITO RRAM by RF magnetic sputtering with different thicknesses of MoS 2 thin films, and explored the possibility of obtaining the nonvolatile and volatile memristive effects of RRAM devices through different operating voltages. By systematically investigating the resistive switching (RS) characteristics, we proposed and discussed the nonvolatile and volatile conceptual models to elaborate on the RS mechanism of the fabricated devices. The nonvolatile and volatile behaviors were explained respectively by the forming and breaking of Cu conductive filaments between Cu and ITO , and the trapping and de-trapping of electrons leading to the change of the Schottky barrier at the ITO/MoS 2 interface.
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering