Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Ab Initio Calculations of Structural and Energetic Properties of Defects in Gallium Nitride

Defects In Gallium Nitride Nanowires: First Principles Calculations

Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations

Point Defects in Group III Nitrides: A Comparative First-Principles Study

Native defects in gallium nitride

First principles study of the effect of nitrogen defects on the electronic structure and optical property of GaN/g-C<sub>3</sub>N<sub>4</sub> heterojunction

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Ab Initio Study on Intrinsic Defect Properties of Germanium Nitride Considered for Gate Dielectric

Ab Initioanalytic Calculation of Point Defects in AlGaN/GaN Heterointerfaces.

Analysis of radiation defects in gallium nitride using deep level transient spectra and first principles methods

First-principle Calculations of Dilute Nitride GaP1−xNx Alloy in Zinc-Blende Structures

Effect of lattice defects on the property of GaN crystal: A molecular dynamics simulation study

First-Principles Exploration of Defect-Pairs in GaN

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Strain effects on the behavior of intrinsic point defects within the GaN/AlN interface

Formation Energies of Substitutional NAs and Split Interstitial Complexes in Dilute GaAsN Alloys with Different Growth Orientations

Ab Initio Calculations on Structural and Electronic Transport Properties of Six-Atom GaN Clusters

Study of Native Point Defects in Al0.5Ga0.5N by First Principles Calculations

Ab initio calculation of structural and electronic properties of Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N alloys

Complex defects in Al0.5Ga0.5N by first principles calculations

First Principle Study of the Native Defects in Hexagonal Aluminum Nitride