High-quality CdS quantum dots sensitized ZnO nanotube array films for superior photoelectrochemical performance
Qian-Qian Gong,Yun-Long Zhao,Qi Zhang,Chun-Yong Hu,Teng-Fei Liu,Hai-Feng Zhang,Guang-Chao Yin,Mei-Ling Sun
DOI: https://doi.org/10.1088/1674-1056/ac4cc2
2022-01-19
Chinese Physics B
Abstract:Abstract Herein, the surface characteristics of ZnO were synthetically optimized by a self-designed simultaneous etching and W-doping hydrothermal method utilizing the as-prepared ZnO nanorod (NR) array films as template. Benefiting from the etching and regrowth process and the different structure stability of the different faces of ZnO NRs, the uniquely etched and W-doped ZnO (EWZ) nanotube (NT) array films with larger surface area, more active sites and better energy band structure were conducted to improve the photoelectrochemical (PEC) performance and the loading quality of CdS quantum dots (QDs). On the basis of better surface characteristics, the CdS QDs were uniformly loaded on EWZ NT array film with good coverage ratio and interface connection, which can effectively improve the light-harvesting ability, charge transportation and separation as well as charge injection efficiency during the PEC reaction. Therefore, all the CdS QDs sensitized EWZ NT array films exhibit significantly enhanced PEC performance. The CdS/EWZ-7 composite films exhibited the optimal photocurrent density with a value of 12 mA/cm 2 , which is 2.5 times higher than that of conventional CdS/ZnO-7 composite films under the same sensitization times of CdS QDs. Additionally, the corresponding etching and optimizing mechanisms were also discussed in present work.
physics, multidisciplinary